采用溶胶-凝胶后硒化法制备了铜锌锡硫硒薄膜,其薄膜表面平整、无裂纹。通过简化铜锌锡硫前驱体溶胶的制备以及后退火时避免使用硫化氢气体（H2S）等方法使铜锌锡硫硒薄膜的制备工艺得到简化。选用低毒有机物乙二醇为溶剂，Cu(CH3COO)2、Zn(CH3COO)2、SnCl2×2H2O和硫脲为原料,制备铜锌锡硫前驱体溶胶。XRD、Raman、EDX和SEM 分析表明制备的铜锌锡硫硒薄膜为锌黄锡矿结构,所有薄膜均贫铜富锌,用0.2 g硒粉、硒化20 min得到的铜锌锡硫硒薄膜其结晶较好,表面晶粒可达1.0μm左右。透射光谱分析结果表明,随硒含量的增加,铜锌锡硫硒薄膜的光学带隙从1.51 eV减小到1.14 eV。
Cu2ZnSn(S1-xSex)4 (CZTSSe) thin films with a compact and crack-free morphology and large-grain are ob-tained via a green Sol-Gel process and post-selenization. The fabrication of CZTSSe films is simplified by predigest-ing preparation process of Cu2ZnSnS4 (CZTS) precusor solution and avoiding using sulfurization. Low-toxic ethylene glycol is selected as solvent, and Cu(CH3COO)2, Zn(CH3COO)2, SnCl2×2H2O and thiourea are used as raw materials. Energy dispersive X-ray analyzer (EDX), X-ray diffraction (XRD) and Raman spectra results indicate that all of CZTSSe thin films with the kesterite structure are of Cu-poor and Zn-rich states. Optical band gap (Eopt) of the CZTSSe thin films decreases from 1.51 to 1.14 eV with increasing Se content.
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