基于能量方程、热流方程和边界条件,推导出了非晶硅薄膜晶体管的沟道热阻模型.采用该模型可准确预估器件有源层内的平均温度.在沟道热阻模型的基础上,考虑器件问场氧化层和金属瓦联线的影响,建立了非晶硅薄膜晶体管的二维热阻模型.采用该模型可描述器件有源层内温度的横向分布,并快速预估沟道内的最高结温.最后,将模型预测结果与器件模拟仿真结果进行了对比,两者拟合良好.
参考文献
| [1] | Cheng M C,Yu F X,Lin J,et al.Steady state and dynamic thermal models for heat flow analysis of silicon on insulator MOSFETs[J].Microelectronics Reliability,2004,44(3):381-396. |
| [2] | Rzepka S,Banerjee K,Meusel E,et al.Characterization of self-heating in advanced VLSI interconnect lines based on thermal finite element simulation[J].IEEE Trans.Comp.Pack.Manuf.Technol,1998,21(3):406-411. |
| [3] | 张彤,郭小军,赵毅,等.a-Si TFT OLED 有源驱动阵列参数的优化与布图设计[J].液晶与显示,2003,18(5):332-337. |
| [4] | Chen H L,Chen W J,Liu P Y,et al.Universal bias dependence of excess current induced by self-heating effect for a-Si; H TFTs[J].IEEE Trans.Electron Devices,2007,54(5):1238-1243. |
| [5] | Wang L,Fjeldly A,lniguez B,etal.Self-heating and kink effects in a-Si H thin film transistors[J].IEEETrans.Electron Devices,2000,47(2):387-397. |
| [6] | Liu Y,Yao R H,Li B.A physical model with the effects of self heating and variable resistance in above threshold region for hydrogenated amorphous silicon thin film transistor[J].Japanese Journal of Applied Physics,2008,47(6):4436-4440. |
| [7] | Wu W,Kang S H,Yuan J S,et al.Thermal effect on electro migration performance for AI/SiO《,2》,Cu/SiO《,2》 and Cu/ low-K interconnect systems[J].Solid-State Electronics,2001,45:59-62. |
| [8] | Tenbroek B M,Bunyan R,Whiting G,et al.Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI devices[J].IEEE Transactions on Electron Devices,1999,46(1).251-253. |
| [9] | Goodson K E,Flik M I.Effect of microseale thermal conduction on the packing limit of silicowowinsulator electronic devices[J].IEEE Transactions on Components Packaging and Manufacturing Technology,1992,15 (5):715-722. |
| [10] | Cheng M C,Wettimuny R,Habitz P,et al.Thermal simulation for SOI devices using thermal-circuit models and device simulation[J].Solid-State Electronics,2003,47(2):345-351. |
| [11] | Yu F X,Cheng M C,Habitz P,et al,Modeling of thermal behavior in SOI structures[J].IEEE Transactions on Electron Devices,2004,51(1):83-91. |
| [12] | Cheng M C,Yu F X,Habitz P,et al.Analytical heat flow modeling of silicon-on-insulator devices[J].Solid-State Electronics,2004,48(3):415-426. |
| [13] | Lin J,Shen M,Cheng M C,et al.Efficient thermal modeling of SO1 MOSFETs for fast dynamic operation[J].IEEE Transactions on Electron Devices,2004,51(10):1659-1666. |
| [14] | Yu F X,Cheng M C.Electrothermal simulation of SOl CMOS analog integrated circuits[.J].Solid-State Electronics,2007,51(5):691-702. |
| [15] | Su L T,Chung J E,Antoniadis D A,et al.Measurement and modeling of self-heating in SOI NMOSFETs[J].IEEE Transactions on Electron Devices,1994,41(1):69-75. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%