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利用直流磁控溅射工艺在玻璃衬底上制备出了透过率高、电阻率较低的钛镓共掺杂氧化锌透明导电薄膜(TGZO).研究了溅射压强对TGZO薄膜结构、形貌和光电性能的影响.研究结果表明,溅射压强对TGZO薄膜的结构和电阻率有重要影响.X射线衍射(XRD)表明,TGZO薄膜为具有c轴择优取向的六角纤锌矿结构多晶薄膜.薄膜的电阻率具有随着溅射压强的增大先减小,后增大的规律,在溅射压强虽为11 Pa时,实验获得的TGZO薄膜晶格畸变最小,电阻率具有最小值1.48×10-4Ω·cm,透过率具有最大值94.3%.实验制备的TGZO薄膜附着性能良好,在400~760 nm波长范围内的平均透过率都高于90%.

参考文献

[1] 刘汉法,袁玉珍,张化福,等.溅射压强对低阻高透过率掺钛氧化锌透明导电薄膜的影响[J].人工晶体学报,2010,39(1):185-189.
[2] Zhang H F,Lei C X,Liu H F,et al.Low-temperature deposition of transparent conducting ZnO:Zr films on PET substrates by DC magnetron sputtering[J].Applied Surface Science,2009,255(11):6054-3056.
[3] 刘汉法,张化福,类成新,等.薄膜厚度对ZnO:Zr透明导电薄膜光电性能的影响[J].液晶与显示,2008,23(6):707-710.
[4] 田苗苗,范翊,刘星元.透明导电铟铋氧化物薄膜的制备及其性能[J].发光学报,2010,31(4):605-609.
[5] 邓雪然,邓宏,韦敏,等.额定压强下O2/Ar比对ZnO:Al薄膜导电性能的影响[J].发光学报,2010,31(2):227-229.
[6] 马晓翠,叶家聪,曹培江,等.射频溅射功率对AZO薄膜结构及光电特性和热稳定性的影响[J].发光学报,2010,31(4):605-609.
[7] Cao H T,Pei Z L,Gong J,et al.Transparent conductive Al and Mn doped ZnO thin films prepared by DC reactive magnetron sputtering[J].Surface and Coatings Technology,2004,184(1):84-92.
[8] Lin W,Ma R X,Shao W,et al.Structural,electrical and optical properties of Gd doped and undoped ZnO:Al (ZAO)thin films prepared by RF magnetron sputtering[J].Applied Surface Science,2007,253(11):5179-5183.
[9] Abduev A K,Akhmedov A K,Asvarov A S.The structural and electrical properties of Ga-doped ZnO and Ga,B codoped ZnO thin films:The effects of additional boron impurity[J].Solar Energy Materials and Solar Cells,2007,91(4):258-260.
[10] Jiang M H,Liu X Y.Structural,electrical and optical properties of Al-Ti codoped ZnO(ZATO)thin films prepared by RF magnetron sputtering[J].Appl.Surface Science,2008,255(5):3175-3178
[11] Yang-Ming Lu,Chen-Min Chang,Shu-I Tsai,et al.Improving the conductance of ZnO thin films by doping with Ti[J].Thin Solid Films,2004,447-448:56-60.
[12] 刘汉法,张化福,袁玉珍,等.掺钛氧化锌透明导电薄膜的制备及特性研究[J].半导体技术,2009,34(11):1092-1095.
[13] 余旭浒,马瑾,计峰,等.薄膜厚度对ZnO:Ga透明导电膜性能的影响[J].功能材料,2005,36(2):241-243.
[14] 郝晓涛,马瑾,马洪磊,等.薄膜厚度对ZnO:Al透明导电膜性能的影响[J].液晶与显示,2002,17(3):169-174.
[15] Kim H,Horwitz J S,Kim W H,et al.Doped ZnO thin films as anode materials for organic light-emitting diodes[J].Thin Solid Films,2002,420-421:539-543.
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