通过对掩膜版上不同狭缝与遮挡条设计与TFT沟道形貌、电学特性相互关系的分析,发现随着狭缝与遮挡尺寸的减小,TFT的电学特性、沟道处光刻胶起伏与最终关键尺寸偏移量都会改善.狭缝的尺寸比遮挡条的尺寸对TFT特性的影响更加显著.考虑到沟道转角处的短路几率问题,小的狭缝与遮挡条尺寸设计更加适合于四次掩膜光刻工艺,转角处的缺陷可以通过调整遮挡条的尺寸来避免.
By analyzing the relation among different slit & bar design of mask, TFT channel profile and electric characteristic, it's found that the TFT electric characteristic, ripple size and channel FICD bias are becoming better while slit or bar size decreases. The slit size has greater influence than bar size on TFT characteristic. Considering the ratio of short in the corner of channel, the small slit & bar design is suitable for four mask processing, and the corner defect can be avoided by tuning bar size.
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