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制备了结构为ITO/MoO3(40 nm)/NPB(40 nm)/TCTA(10 nm)/CBP∶GIR1 (14%)(x)/CBP∶R-4B(6%) (30-x)/BCP(10 nm)/A1Q(40 nm)/LiF(1 nm)/AL(100 nm)的绿红磷光器件.通过调节红绿发光层的相对厚度,对器件的发光性能进行了研究.结果表明:x为15 nm,电压为6V,电流密度为255.6 mA/cm2,得到最高电流效率为15.4 cd/A,红色发光峰值强度相对较大,绿色峰值稍弱的电致发光光谱.分析原因可能是掺杂染料与临近层的能级匹配和浓度等会影响发光层载流子注入与传输;空穴及电子阻挡层对发光层内载流子和激子的有效限制作用会提高掺杂染料在发光层的复合几率;另外,CBP的空穴迁移率大于电子迁移率,发光的主要区域位于发光层与BCP界面,掺杂于该区域的R-4B具有较高的发光强度.

参考文献

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