对FFS-TFT制作工艺中,与氮化硅膜层接触的透明电极ITO发生的雾状不良进行分析研究.通过扫描电子显微镜、宏观/微观显微镜和背光源测试设备对样品进行分析.结果显示接触层的等离子体界面处理对ITO的透过率和膜质特性有较大影响,可导致严重的雾状不良发生和刻蚀工艺中的膜层下端过度刻蚀的问题.通过在透明电极ITO上面沉积微薄的过渡缓冲膜层,并优化界面等离子体处理条件,可以改善雾状不良.
参考文献
| [1] | 邵喜斌.液晶显示技术的最新进展[J].液晶与显示,2000,15(3):163-170.Shao X B.Recent progress of liquid crystal display technology[J].Chinese Journal of Liquid Crystals and Displays,2000,15(3):163-170.(in Chinese) |
| [2] | 黄锡珉.平板显示技术的发展[J].液晶与显示,2002,17(5):317-322.Huang X M.Progress of flat panel display[J].Chinese Journal of Liquid Crystals and Displays,2002,17 (5):317-322.(in Chinese) |
| [3] | 童林夙.2012年后的平板显示世界[J].现代显示,2007(7):6-16.Tong L S.Flat panel displays after 2012[J].Advanced Display,2007(7):6-16.(in Chinese) |
| [4] | 王文根,李瑛,王秀如,等.大尺寸TFT-LCD的LED背光技术[J].现代显示,2006(8):59-63.Wang W G,Li Y,Wang X R,et al.Technologies of LED Backlight for Large-Side-TFT-LCD[J].Advanced Display,2006(8):59-63.(in Chinese) |
| [5] | 季旭东.LCD背光源产品的新发展[J].液晶与显示,2002,17(2):119-127.J i X D.New development of LCDs backlight[J].Chinese Journal of Liquid Crystals and Displays,2002,17 (2):119-127.(in Chinese) |
| [6] | Lee S H,Lee S M,Kim H Y,et al.18.1"Ultra-FFS TFT-LCD with super image quality and fast response time[C]//SID01 D1GEST,2001:484-487. |
| [7] | Lee S H,Lee S L,Kim H Y,et al.Electro-optic characteristics and switching principle of a nematic liquid crystal cell controlled by fringe-field switching[J].Appl.Phys.Lett.,1998,73 (20):2881-2883. |
| [8] | 谢振宇,龙春平,邓朝勇,等.非晶硅TFT栅界面层氮化硅薄膜性能的研究[J].真空科学与技术学报,2007,27(4):341-345.Xie Z Y,Long C P,Deng C Y,et al.Interfacial structures and properties of SiN layer in a-Si thin film transistors[J].Chinese Journal of Vacuum Science and Technology,2007,27(4):341-345.(in Chinese) |
| [9] | 刘翔,薛建设,周伟峰,等.改善沉积氮化硅薄膜对FFS-TFT透明电极ITO影响的研究[J].真空科学与技术学报,2012,32(1):36-38.Liu X,Xue J S,Zhou W F,et al.SiNx buffer layer and transparence improvement of Indium-Tin-Oxide electrode[J].Chinese Journal of Vacuum Science and Technology,2012,32 (1):36-38.(in Chinese) |
| [10] | 王守坤,孙亮,郝昭慧,等.基板支撑梢对TFT栅界面SiNx和a-Si成膜特性的影响[J].液晶与显示,2012,27(5):613-617.Wang S K,Sun L,Hao Z H,etal.Effect of PECVD pin on the SiNx and a-Si layer of thin film transistor[J].Chinese Journal of Liquid Crystals and Displays,2012,27 (5):613-617.(in Chinese) |
| [11] | Misako Y,Hiroshi N Y,Makoto,et al.Modification effect of a-Si1-xNx:H surface by hydrogen redials[J].J Appl.Phys.,1995,B34(2):791-795. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%