利用磁控溅射设备,Mg0.04Zn0.96O陶瓷靶材,以高纯的氮气与氩气混合气体作为溅射气体,在石英衬底上沉积获得了N掺杂p型Mg0.07Zn0.93O薄膜,薄膜的电阻率为21.47 Ω·cm,载流子浓度为8.38×1016 cm 3,迁移率为3.45 cm2/(V·s).研究了该薄膜的结构与光学性能.实验结果显示,其拉曼光谱中出现了位于272和642 cm 1左右与No相关的振动模.低温光致发光光谱中,可以观察到位于3.201,3.384和3.469 eV的3个发光峰,其中位于3.384 eV的发光峰归因为导带电子到缺陷能级的复合发光,而位于3.469 eV的发光峰归因为受主束缚激子(A0X)的辐射复合,这说明该N掺杂MgZnO薄膜的空穴载流子主要来自No受主的贡献.
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