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利用稳态 SCLC 法和阻抗谱法测量了由溶液工艺制备的 Tips-PEN 薄膜的空穴迁移率,并对两种方法的测试结果进行比较和分析.测试样品是 p＋ Si/PEDOT∶PSS/Tips-PEN/Ag 构成的单载流子器件.稳态 SCLC 法测试的器件Tips-PEN 厚度为87 nm,得到零场迁移率和场依赖因子分别为1.21×10-5 cm2/(V??s)和0.0024(cm/V)1/2；阻抗谱法测试的器件 Tips-PEN 厚度为827 nm,得到零场迁移率和场依赖因子分别为1.219×10-5 cm2/(V??s)和0.00347(cm/V)1/2.稳态 SCLC 法得到的场依赖因子较小,呈现较弱的场依赖关系,其原因是为得到无陷阱模式下的稳态 SCLC 需要施加的电场远远高于阻抗谱测量时的电场,以至于注入较高的载流子浓度.这一结果显示了在较高载流子浓度下迁移率与场的依赖变弱,与理论模型和模拟预测的趋势一致.

The field-dependent hole mobility of Tips-PEN film prepared by solution-process was ex-tracted with steady-state SCLC and impedance spectroscopy method,and the results of the two methods were compared and analyzed.The samples used in this study have a general structure of p+Si/PEDOT∶PSS/Tips-PEN/Ag,which is a single-carrier device.For Tips-PEN thickness of 87 nm devices,the zero field mobility and the field-dependent factors obtained with steady-state SCLC were 1.21 × 10 -5 cm2/(V??s)and 0.002 4 (cm/V)1/2 ,respectively.For thickness of 827 nm device,the zero field mobility and field-dependent factors obtained with impedance spectroscopy were 1.21 9 × 10 -5 cm2/(V??s)and 0.003 47 (cm/V)1/2 ,respectively.The smaller field-dependent factor obtained by steady-state SCLC shows that the mobility is weaker dependent on the field.This is due to much higher electric field applied in order to get steady-state free-trap SCLC than that in impedance spec-troscopy and then higher carrier concentration is injected.The result shows that there is weaker elec-tric field dependence of mobility in higher carrier concentration and is consistent with theoretical model and simulation.