为了满足市场对显示产品高分辨率的要求，需要从产品的设计和工艺各个方面进行优化，其中过孔尺寸和线宽两个因素对阵列基板分辨率影响最大，本文通过相移掩模技术可以实现对过孔尺寸的精确控制，通过在普通过孔上增加一定厚度和透过率的相移层，并对各种参数下过孔的光透过率进行模拟分析，可以获得不同相移层参数对过孔特性的影响，最后提出一种可以获得稳定微小过孔的方法。结果表明，通过对相移层透过率和宽度的控制，可以获得对曝光光强不敏感的稳定微小过孔，曝光量增大一倍乃至数倍的过程中，过孔尺寸始终保持稳定，提高了工艺容忍度。对于模拟中过孔尺寸可以小于设备的4μm 分辨极限。通过减小过孔尺寸，可以有效提升 TFT 显示产品的开口率，实现产品对高分辨率的要求。
In order to meet the requirements of the market for high resolution display products,the de-sign and process technologies of products should be optimized.The most important factors affecting the product characteristics are the size of through-hole and line width.This article explains how to control the exact size of the tiny hole by using phase shift mask technology.By adding a phase shift layer with a certain thickness and transmittance onto the usual through-hole,the light transmittance of tiny hole is analyzed under different parameters.It can be obtained the relation between the trans-mittance and parameter of phase shift layer,and it can infer a control solution to get a tiny hole with stable size.The results show that,by the control of transmittance and the width of the phase shift layer,a stable size of tiny hole can be obtained with the property of insensitive to the exposure dose. When the exposure dose doubled or even several times in the process,the tiny hole size remains a sta-bilized value.It means a higher process tolerance.The size of the tiny hole could even be less than the device's resolution limit (4 μm).By reducing the size of through-hole,we can effectively increase the aperture ratio of TFT products and get higher PPI(pixel per inch)products.
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