在薄膜晶体管液晶显示器件(TFT-LCD)的制作过程中,Mura 是一种常见的不良现象,它可以直接影响到产品的画面品质.本文结合生产工艺的实际情况,采用宏观微观检查设备 Macro/Micro(M/M)、扫描电子显微镜(SEM)、聚焦离子束测试仪(FIB)等设备进行检测分析,研究了产品开发过程中出现的 Sand Mura 问题.实验结果表明,Sand Mura发生的主要原因是像素电极 ITO 在刻蚀过程中由于过刻发生断裂,导致在通电时该处液晶分子偏转发生异常,进而阻挡了光的透过而形成暗点；通过变更 ITO 薄膜的厚度及刻蚀时间等一系列措施,防止了像素电极在 PVX 过孔处因过刻引起的断裂,不良发生率降至0．3％,产品质量得到了很大的提高.此外,过孔设计优化方案有助于新产品开发阶段避免该不良的发生,为以后相关问题的研究奠定了一些理论基础.
Mura is a common defect which degrades display quality greatly in TFT-LCD process.Sand Mura was studied in this paper which happened in a new product development,and the experiments were carried out by Macroscopic and Microscopic Inspection(M/M),Scanning Electron Microscope (SEM),Focused Ion beam(FIB)and so on.Experimental results show that the pixel electrode ITO open happened in the over wet etch process is the root cause of Sand Mura defect,and it also lead to liquid crystal molecules deflected exception,therefore,the light was shielded and dark spots were generated;By adjusting the thickness of pixel electrode ITO film,etch time and other measures,pixel electrode open can be avoid which is related to the over etch in the PVX hole,the defect ratio of Sand Mura can be reduce to 0.3% and the display quality of product was effectively improved.In addition, the optimizing via design scheme and above mentioned results provide valuable data and theory basis for related issues in the development stage of new product.
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