对 TFT 制作工艺中,TFT 有源层刻蚀均一性与电学性质进行分析研究。通过扫描电子显微镜,电学测试设备对样品进行分析。结果显示沟道有源层的刻蚀功率,气体比例及刻蚀压强对有源层的刻蚀均一性都有较大影响,并会影响TFT 电学特性的均一性。通过适当降低刻蚀功率及反应气体 SF6/Cl2的比例,同时,降低反应压强,可以改善有源层刻蚀的均一性。从而,TFT 电学特性的均匀性得到优化。
Active layers(a-Si)were etched by enhance cathode couple plasma(ECCP)and used as elec-tronic channels in the thin film transistors.The uniformity of active layers and electrical characteristics were studied.The obtained samples were characterized by scanning electron microscopy (SEM)and e-lectronic parameter measurement.The etching power,gas ratio and etching pressure played an impor-tant role in uniformity of active layers,which can cause the issue about TFT electrical characteristics. The uniformity of active layers can be improved by reduced the ratio about etching power ratio (source power/bias power)and reaction gas ratio (SF6/Cl2 ),meanwhile,reaction pressure was also reduced. Therefore,the uniformity of TFT electrical characteristics can also be improved.
参考文献
| [1] | 邵喜斌.液晶显示技术的最新进展[J].液晶与显示,2000(03):163-170. |
| [2] | 童林夙.2012年后的平板显示世界[J].现代显示,2007(07):6-16. |
| [3] | 李田生,谢振宇,李婧,阎长江,徐少颖,陈旭,闵泰烨.有源层刻蚀工艺优化对TFT-LCD品质的影响[J].液晶与显示,2013(05):720-725. |
| [4] | 闫方亮,沈世妃,侯智,刘祖宏,郑载润,刘锋,李斗熙.a-Si厚度对TFT开关特性的影响[J].现代显示,2011(07):23-28. |
| [5] | 宋跃,邹雪城.a-Si TFT亚阈特征参数与有源层的厚度效应[J].固体电子学研究与进展,2004(01):20-25. |
| [6] | 王晓光,朱晓明,尹延昭.等离子体刻蚀工艺的优化研究[J].中国新技术新产品,2010(14):22. |
| [7] | 张少强,徐重阳,邹雪城,等.薄有源层非晶硅薄膜晶体管特性的研究[J].电子学报,1 997,25(2):53-56. Zhang S Q,Xu C Y,Zou X C,et al.The Study of The characteristics of a-Si:H TFT with thin active layer struc-ture [J].Acta Electronic Sinica,1 997,25(2):53-56.(in Chinese),1997. |
| [8] | Powell M J,Van Berkel C,Franklin,A R,et al.Defect pool in amorphous-silicon thin-film transistors[J].Phys. Rev.B,1 992,45(8):41 60-41 70.(in Chinese) |
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