为了对 TFT-LCD 中的闪烁不良进行改善,本文通过研究 TFT-LCD 中干法刻蚀(Nplus Etch)对 TFT 特性的影响,以此对刻蚀条件(Power、Gas)进行优化,达到降低 Photo-Iof 的目的。实验结果表明,当干法刻蚀主工艺条件为：Source/Bias=4 k/5 k、Press=90 mT、SF6/O2=1.1 k/3 kml/min,AT Step 条件为：Source/Bias=2 k/2 k、Press=100 mT、SF6/O2=3 k/3 kmL/min 时,Photo-Iof 由量产最初的58.15降至20.52,闪烁由15%~30%降至10%以下。干法刻蚀工艺条件的优化对 TFT 特性以及闪烁有明显改善效果。
To improve the flicker in TFT-LCD,by studying the influence of Dry Etch(Nplus Etch)on TFT characteristics,the etching conditions (power and gas)were optimized,and the Photo-Iof was reduced,then the flicker was improved.Experimental results show that when the main process condi-tions of Nplus Etch were:Source/Bias=4 k/5 k,Press=90 mT,SF6/O2 =1.1 k/3 kmL/min and the conditions of AT Step were:Source/Bias=2 k/2 k,Press=100 mT,SF6/O2 =3 k/3 kmL/min,the Photo-Iof fell from 58.15 to 20.52 and the flicker fell from 15%-30% to 10% or less.The optimization of Dry Etching process has obvious improvement to TFT characteristics and flicker.
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