欢迎登录材料期刊网

材料期刊网

高级检索

因酞菁薄膜平面具有多电子共轭大π键结构,本文采用异质诱导的方式对酞菁薄膜的生长特性进行了改善研究.采用高掺杂硅为栅极,氧化硅为绝缘层,生长α-四噻吩或p-六联苯薄膜为异质诱导层,制备了酞菁铜有机薄膜晶体管.利用原子力显微镜研究薄膜生长特性,并对比研究了2种诱导层对薄膜晶体管性能的影响.实验结果表明:α-四噻吩上生长的酞菁铜薄膜,形貌呈片状,而p六联苯上生长的酞菁铜薄膜,形貌呈针状,均与单层酞菁铜棒状形貌不同.同时,α-四噻吩与p六联苯薄膜上生长酞菁铜后,两者晶体管电性能都有不同程度的提高,均比单层酞菁铜提高了1~2个数量级,表明α-四噻吩或p-六联苯对酞菁铜薄膜均有诱导效应,可以获得高性能的有机薄膜晶体管.

参考文献

[1] Mao Wang;Jie Li;Guangyao Zhao;Qinghe Wu;Yangguang Huang;Wenping Hu;Xike Gao;Hongxiang Li;Daoben Zhu.High-Performance Organic Field-Effect Transistors Based on Single and Large-Area Aligned Crystalline Microribbons of 6,13-Dichloropentacene[J].Advanced Materials,201315(15):2229-2233.
[2] 林广庆;李鹏;王明晖;冯翔;张俊;熊贤风;邱龙臻;吕国强.表面修饰制备高性能薄膜晶体管[J].液晶与显示,2013(4):490-494.
[3] Haibo Wang;De Song;Junliang Yang;Bo Yu;Yanhou Geng;Donghang Yan.High mobility vanadyl-phthalocyanine polycrystalline films for organic field-effect transistors[J].Applied physics letters,200725(25):253510-1-253510-3-0.
[4] 刘欢;余屯;邱禹;钟传杰.Tips-Pentacene OTFT电极接触电阻的研究[J].液晶与显示,2013(2):210-214.
[5] Chang, Hao;Li, Weili;Tian, Hongkun;Geng, Yanhou;Wang, Haibo;Yan, Donghang;Wang, Tong.High performance of rubrene thin film transistor by weak epitaxy growth method[J].Organic electronics,2015:43-48.
[6] Yang JL;Wang T;Wang HB;Zhu F;Li G;Yan DH.Weak epitaxy growth of metal-free phthalocyanine on p-sexiphenyl monolayer and double-layer films[J].The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical,200810(10):3132-3137.
[7] Lijuan Wang;Yiping Li;Xiaofeng Song;Xin Liu;Long Zhang;Donghang Yan.Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator[J].Applied physics letters,201324(24):243302-1-243302-4.
[8] Luisa Raimondo;Enrico Fumagalli;Massimo Moret.Epitaxial Interfaces in Rubrene Thin Film Heterostmctures[J].The journal of physical chemistry, C. Nanomaterials and interfaces,201327(27):13981-13988.
[9] Siegrist T.;Laudise RA.;Katz HE.;Haddon RC.;Kloc C..Crystal growth, structure, and electronic band structure of alpha-4T polymorphs[J].Advanced Materials,19985(5):379-382.
[10] 王海波;闫东航.结晶性有机半导体异质结器件[J].中国科学B辑,2009(1):1-21.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%