因酞菁薄膜平面具有多电子共轭大π键结构,本文采用异质诱导的方式对酞菁薄膜的生长特性进行了改善研究.采用高掺杂硅为栅极,氧化硅为绝缘层,生长α-四噻吩或p-六联苯薄膜为异质诱导层,制备了酞菁铜有机薄膜晶体管.利用原子力显微镜研究薄膜生长特性,并对比研究了2种诱导层对薄膜晶体管性能的影响.实验结果表明:α-四噻吩上生长的酞菁铜薄膜,形貌呈片状,而p六联苯上生长的酞菁铜薄膜,形貌呈针状,均与单层酞菁铜棒状形貌不同.同时,α-四噻吩与p六联苯薄膜上生长酞菁铜后,两者晶体管电性能都有不同程度的提高,均比单层酞菁铜提高了1~2个数量级,表明α-四噻吩或p-六联苯对酞菁铜薄膜均有诱导效应,可以获得高性能的有机薄膜晶体管.
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