基于溶液旋涂法和高压退火工艺制备了 a-IGZO 薄膜。采用椭圆偏振光谱分析仪以及原子力显微镜研究和分析了H 2 O 2对薄膜的表面结构和光学特性的影响。实验结果表明,a-IGZO 前驱液中不含 H 2 O 2的薄膜,退火温度从220℃升高到300℃,薄膜的光学带隙从3．03增加到3．29,而膜表面粗糙层由20．69 nm 降至4．68 nm。在同样的高压退火条件处理下,与前驱液中没加入 H 2 O 2的薄膜相比,折射率显著增加并明显的降低了薄膜表面粗糙度。退火温度在300℃时,薄膜的光学带隙由3．29 eV 增大到3．34 eV,表面粗糙层由4．68 nm 减少到2．89 nm。因此,H 2 O 2可以在相对低温条件下有效降低薄膜内部的有机物残留及微缺陷,形成更加致密的 a-IGZO 薄膜。证明了利用 H 2 O 2能够有效降低溶液法制备 a-IGZO 薄膜所需的退火温度。
The a-IGZO films were fabricated by solution method and high-pressure annealing process, and the effects of H 2 O 2 on microstructural and optical properties of the a-IGZO films were studied by spectroscopic ellipsometry and atomic force microscope (AFM).Results indicated that when the an-nealing temperature was increased from 220 ℃ to 300 ℃,the optical band gap of the film was in-creased from 3.03 eV to 3.29 eV,the roughness was decreased from 20.69 nm to 4.68 nm.Compared to the film without H 2 O 2 ,the refractive of the film with H 2 O 2 was increased and the roughness was de-creased obviously under the same high-pressure annealing process,the optical band gap of the film was increased from 3.29 eV to 3.34 eV,but the surface roughness was decreased from 4.68 nm to 2.89 nm at 300 ℃.Therefore,employing H 2 O 2 in the solution could effectively minimize organic chemical residues and pores at lower temperatures,as well as form more dense a-IGZO film.All experiment re-sults indicated that H 2 O 2 could decrease the temperature of treatment when depositing a-IGZO films by solution method.
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