本文模拟MOVPE工艺设定热力学条件, 建立了涉及5个相和54个气相物种的In-As-Sb-C-H五元系热力学系统. 采用先进的热力学计算方法, 对该系统进行了热力学分析. 计算结果与实验结果比较发现, 热力学计算能较好地预测系统相关系及半导体相成分.
参考文献
[1] | Fukui T;Horikoshi Y .[J].Japanese Journal of Applied Physics,1980,19:L53. |
[2] | Biefeld R M .[J].Journal of Crystal Growth,1986,77(75):255. |
[3] | Biefeld R M .[J].Journal of Crystal Growth,1986,77:392. |
[4] | Biefeld R M;Hills C R;Lee S R .[J].Journal of Crystal Growth,1988,91:515. |
[5] | Biefeld R M;Kurtz S R;Casalnuovo S A .[J].Journal of Crystal Growth,1992,124:401. |
[6] | Biefeld R M;Baucom K C;Kurtz S R .[J].Journal of Crystal Growth,1994,137:231. |
[7] | Chiang P K;Bedair S M .[J].Journal of the Electrochemical Society,1984,131:2422. |
[8] | Giani A.;Pascaldelannoy F.;Bougnot G.;Gouskov L.;Catinaud C.;Podlecki J. .ELABORATION AND CHARACTERIZATION OF INASSB GROWN ON GASB AND GAAS SUBSTRATES[J].Journal of Crystal Growth,1995(1/2):25-30. |
[9] | Wei Guangyu;Peng Ruiwu;Ding Yongqing;Ren Yaocheng .[J].Rare Metals,1993,12:103. |
[10] | Stringfellow G B.Organometallic Vapor Phase Epitaxy: Theory,Practice[M].New York: Academic Press, Sandiego, C A,1989(55) |
[11] | Seki H;Koukitu A .[J].Journal of Crystal Growth,1986,74:172. |
[12] | Seki H;Koukitu A .[J].Journal of Crystal Growth,1989,98:118. |
[13] | 张维敬;白克武;杜振民 .[J].光子学报,1995,24(Z3):79. |
[14] | 张维敬;白克武;杜振民 .[J].光子学报,1995,24(Z3):52. |
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