TEM观察砷化镓晶片损伤层

1.北京有色金属研究总院,北京,100088

2.北京有色金属研究总院,北京,100088

3.北京有色金属研究总院,北京,100088

Observation of Damage Layer on Surface of GaAs Wafer by TEM

用透射电镜、扫描电镜对GaAs材料加工工艺中的表面损伤层进行了观察和检测. 结果切片损伤层深度≤50 μm、双面研磨损伤层深度≤15 μm、机械化学抛光损伤层深度 (腐蚀前) <1.2 μm. 分析了损伤结构及其引入的因素.

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