300 mm 硅单晶的缩颈生长及应力分析

稀有金属, 2001, 25(4): 266-268. doi: 10.3969/j.issn.0258-7076.2001.04.006

300 mm 硅单晶的缩颈生长及应力分析

程景柏 ^1, , 屠海令 ^2, , 周旗钢 ^3, , 王敬 ^4, , 常青 ^5, , 张果虎 ^6, , 方锋 ^7,

1.北京有色金属研究总院

2.北京有色金属研究总院

3.北京有色金属研究总院

4.北京有色金属研究总院

5.北京有色金属研究总院

6.北京有色金属研究总院

7.北京有色金属研究总院

关键词： 300 mm 硅单晶缩颈脆性断裂抗拉强度

Necking-down Growth and Stress Analysis for 300 mm CZ Silicon Single Crystals

对不同直径颈部晶体进行了拉伸实验及断口形貌观察,颈部晶体的断裂属于脆性断裂,增大晶体颈部直径可以增大其承受拉力,从而可以制得更大重量的单晶.缩颈生长工艺条件会对颈部晶体的抗拉强度产生影响.讨论了颈部晶体的断裂机制.

Tensile tests for the neckings with different diameters were made, and then the fracture morphology of the neckings was analyzed by scanning electron microscopy(SEM). The surface morphology demonstrates that the fracture is fragile. The large seeds can support crystals grown from large poly-silicon charge sizes. It is indicated that the necking down growth conditions have certain effects on the tensile stress limit of the neckings. The fracture mechanism of neckings was discussed.

参考文献

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[3]	Chandrasekhar S;Kim K M .[J].Electrochemical Society Proceedings,1998,98(01):411.
[4]	Yip Y F S;Wilcox W R .[J].Journal of Crystal Growth,1976,36:29.
[5]	Sylwestrowicz W D .[J].Philosophical Magazine,1962,7:1825.

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