利用质量分离的低能双离子束外延技术,得到了(Ga,Mn,As) 化合物.衬底温度 523K 条件下生长的样品的俄歇电子谱表明,一部分锰淀积在 GaAs 的表面形成一层厚度约为 30 nm 的外延层,另一部分锰离子成功注入到 GaAs 基底里,注入深度约为 160 nm.衬底温度为 523K 时获得了 Ga5.2Mn 相,衬底温度为 673K 时获得了 Ga5.2Mn、Ga5Mn8 和 Mn3Ga 相.在 1113K 条件下对 673K 生长的样品进行退火,退火后样品中原有的 Mn3Ga 消失,Ga5Mn8 峰减弱趋于消失,Ga5.2Mn 仍然存在而且结晶更好,并出现 Mn2As 新相.
By mass-analyzed low energy dual-ion beam epitaxy technique, the (Ga,Mn,As) compounds were obtained. Auger electron spectroscopy spectra of the sample grown at 523K show that some of Mn ions deposited on single-crystal GaAs substrate form a 30nm thick epilayer, and the other Mn ions successfully implant into GaAs substrate and the depth of implantation is 160 nm. Ga5.2Mn is obtained at the substate temperature of 523K. Ga5.2Mn,Ga5Mn8 and Mn3Ga is obtained at the substrate temperature of 673K. The sample grown at 673K is annealed at 1113K. In this annealed sample Mn3Ga disappear, Ga5Mn8 tended to disappear, Ga5.2Mn crystallize better and new phase of Mn5.2As is generated.
参考文献
| [1] | Ohno H .[J].科学（上海),1998,281:951. |
| [2] | Hayashi T.;Nishinaga T.;Shimada H.;Tsuchiya H.;Otuka Y.;Tanaka M. .(GAMN)AS - GAAS-BASED III-V DILUTED MAGNETIC SEMICONDUCTORS GROWN BY MOLECULAR BEAM EPITAXY[J].Journal of Crystal Growth,1997(Pt.2):1063-1068. |
| [3] | Hayashi T.;Nishinaga T.;Shimada H.;Tanaka M. .MAGNETIC AND MAGNETOTRANSPORT PROPERTIES OF NEW III-V DILUTED MAGNETIC SEMICONDUCTORS - GAMNAS[J].Journal of Applied Physics,1997(8 Pt.2b):4865-4867. |
| [4] | HayashiT;Tanaka M;Setok K .[J].Applied Physics Letters,1997,71(13):1825. |
| [5] | Prinz G A .[J].科学(上海),1990,250:1092. |
| [6] | Prinz G A .[J].Physics Today,1995,48(04):58. |
| [7] | Tanaka M J .[J].Journal of Crystal Growth,1999,201/202:660. |
| [8] | Thibaro P M;Kneedler E;Jonker B T .[J].Physical Review B,1996,53(16):R10481. |
| [9] | Sands T;Harbison J P;Leadbeater M L .[J].Applied Physics Letters,1990,57(24):2609. |
| [10] | Tanaka M;Harbison J P;Park M C .[J].Applied Physics Letters,1994,65(15):1964. |
| [11] | Miyanishi S;Akinaga H;VanRoy W;Tanaka K;ELECTROTECH LAB TSUKUBA IBARAKI 305 JAPAN. .Epitaxial Mn2Sb thin films grown by molecular-beam epitaxy on (001) GaAs and their magnetic and magneto-optical properties[J].Applied physics letters,1997(15):2046-2048. |
| [12] | Fullerton E E;Mattson J E;Lee S R .[J].Journal of Magnetism and Magnetic Materials,1992,117:1301. |
| [13] | Akinaga H.;Borghs G.;Miyanishi S.;Asamitsu A.;Van Roy W. Tomioka Y.;Kuo LH.;De Boeck J. .Negative magnetoresistance in GaAs with magnetic MnAs nanoclusters[J].Applied physics letters,1998(25):3368-3370. |
| [14] | Yang Zongxian .[J].Journal of Magnetism and Magnetic Materials,1998,182:369. |
| [15] | QIN F;Wang X;Liu Z .[J].Review of Scientific Instruments,1991,62(10):2322. |
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