通过氨化射频溅射工艺生长的纳米Ga2O3薄膜, 在石英衬底上反应自组装生成了高质量的GaN纳米线. 用X射线衍射(XRD)、透射电镜(TEM)和高分辨电镜(HRTEM)对样品的组分、形貌和结构进行了分析. 生成的GaN纳米线平直光滑, 其直径为20～120 nm, 长可达50 μm; 纳米线为高质量的单晶六方纤锌矿GaN, 沿[110]方向生长. 用此工艺制备GaN纳米线, 简单新颖, 不需要模板或催化剂的辅助作用.
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