为了获得高质量半绝缘砷化镓单晶片,有必要降低微缺陷密度.开展了晶片热处理工艺的研究,确定了晶片热处理的温度、时间、降温速率等一系列工艺参数,证实了采用此项工艺能降低LEC-GaAs晶片的砷沉淀密度,即AB-EPD,同时也保证了晶片的电学参数不受影响.通过对晶片热处理工艺过程和结果进行分析,给出了晶片热处理工艺理论模型的解释.
参考文献
| [1] | Nori M;Kano G;Inoue T et al.Multiple wafer annealing of undoped SI LEC GaAs and its effect on the wafer quality[J].Semigroup Forum,1990,155 |
| [2] | Fang Z Q;Look D C;Yamamoto Y.Effect of multiple wafer-annealing on main traps in Czochralski-grown semi-insulating GaAs[J].Applied Physics Letters,1996 |
| [3] | Noack M.;Wenzl H.;Kehr KW. .FAST INTERSTITIAL DIFFUSION IN AS-PRESSURE ANNEALED GAAS[J].Journal of Crystal Growth,1997(4):438-444. |
| [4] | Chichibu S;Ohkubo N;Matsuoto S .EL2 deep level distribution under controlled As pressure annealing of LEC GaAs[J].Semigroup Forum,1988,25 |
| [5] | Martin S;Suchet P;Martin G M .Precipitates and performance of GaAs analog and digital integrated circuits[J].Semigroup Forum,1990,1 |
| [6] | Fawcett T J;Brozel M R;Stirland D J .Behaviour of arsenic precipitates in as-grown and heat treated LEC GaAs[J].Gallium Arsenide and Related Compound,1989,19 |
| [7] | Ka O;Oda O .Photoluminescence investigation of ingot- and wafer-annealing effect on semi-insulating[J].Semigroup Forum,1992,111 |
| [8] | Kano G;Takakusaki M;Oyake M et al.Small surface oval defects on MBE grown lawyers and the quality of substrate[J].Semigroup Forum,1990,59 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%