研究并对比了Ti/Al/Ni/Au和Ti/Al/Pt/Au多层金属膜与未掺杂的Al0.22Ga0.78N/GaN(i-AlGaN/GaN) 异质结构之间的欧姆接触性质.在退火温度低于700 ℃时,两种接触样品上都不能得到欧姆接触.随着退火温度的升高,850 ℃快速退火后,在Ti/Al/Ni/Au 接触上获得了1.26×10-6 Ω*cm2的比接触电阻率,在Ti/Al/Pt/Au接触上获得了1.97×10-5 Ω*cm2的比接触电阻率.研究结果表明,金属与半导体接触界面和Al0.22Ga0.78N异质结构界面载流子沟道之间适当的势垒的存在对高质量欧姆接触的形成起重要作用,势垒的宽度取决于退火温度以及退火的具体进程.对Ti/Al/Ni/Au和Ti/Al/Pt/Au欧姆接触比接触电阻率的差异进行了解释.
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