通过XRD和Raman谱研究了用金属有机化学气相沉积(MOCVD)的方法在Si(111)面上生长的AlN薄膜层上的应力和压电极化,Raman谱观察到两个声子峰位分别在619.5 cm-1(A1(TO))和668.5 cm-1(E2(high)).通过光学声子E2(high)的频移为13 cm-1计算得到AlN薄膜上的双轴压应力为5.1 GPa,在z轴方向上和在垂直于z轴方向上的应变分别为εzz=6.7×10-3和εxx=-1.1×10-2,产生的压电极化电荷PPE=2.26×10-2 c·m-2,这相当于在Si的表面产生浓度为1.41×1013 c·cm-2的电子积累.同时,实验还发现在MOCVD生长过程中存在Si原子的扩散,在界面处形成了一个过渡层,过渡层主要以Si原子取代Al原子的位置并形成Si-N键为主.
参考文献
| [1] | Liu L;Edgar J H .Substrates for gallium nitride epitaxy[J].Materials Science and Engineering,2002,R37:61. |
| [2] | Nikishin S A;Antipov V G;Francoeur S et al.High-quality AlN grown on Si(111) by gas-source molecular-beam epitaxy with ammonia[J].Applied Physics Letters,1999,75:484. |
| [3] | Chen P;Zhang R;Zhao Z M et al.Growth of high quality GaN layers with AlN buffer on Si(111) substrates[J].Journal of Crystal Growth,2001,225:150. |
| [4] | Goni AR.;Syassen K.;Thomsen C.;Wagner JM.;Siegle H. .Effect of pressure on optical phonon modes and transverse effective charges in GaN and AlN - art. no. 035205[J].Physical Review.B.Condensed Matter,2001(3):5205-0. |
| [5] | Wagner J M;Bechstedt F .Phonon deformation potentials of α-GaN and -AlN:An ab initio calculation[J].Applied Physics Letters,2000,77:346. |
| [6] | Wright AF. .ELASTIC PROPERTIES OF ZINC-BLENDE AND WURTZITE ALN, GAN, AND INN[J].Journal of Applied Physics,1997(6):2833-2839. |
| [7] | Ambacher O;Foutz B;Smart J et al.Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostucture[J].Journal of Applied Physics,2000,87:334. |
| [8] | Bernardini F.;Vanderbilt D.;Fiorentini V. .SPONTANEOUS POLARIZATION AND PIEZOELECTRIC CONSTANTS OF III-V NITRIDES[J].Physical Review.B.Condensed Matter,1997(16):10024-10027. |
| [9] | Xi D J;Zheng Y D;Chen P et al.Microstructure of AlGaN/AlN/Si(111) grown by metalorganic chemical vapor deposition[J].Physica Status Solidi A,2002,1(137) |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%