采用低压金属有机物化学气相沉积(MOVPE)工艺,分别在p型和n型Ge衬底上生长了GaAs电池,发现Ge甚至可以扩散到GaAs电池结区,导致电池性能严重下降,而Ga和As的扩散,常常导致异常Ⅳ曲线; 在GaAs外延层观察到的主要晶体缺陷是反相畴和线位错,通过降低生长温度和优化成核条件,获得了较好的界面特性,在n-Ge衬底上获得了效率为20.2% (AM0,25 ℃,2 cm×4 cm)的GaAs电池,在p-Ge衬底上获得了性能较好的Ge电池.
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