主要应用高掺杂的p-n结理论进行隧道结的计算研究工作,针对GaInP/GaAs双结电池的结构,选择不同的宽禁带材料研究隧道结I-V特性以及不同的掺杂浓度对于其I-V特性的影响,寻找出掺杂浓度与隧穿电流的关系曲线.结果表明: 随着掺杂浓度的提高,峰值电流密度逐渐增大; 对于GaInP/GaAs太阳电池,隧道结采用GaInP材料比采用GaAs材料性能要好的多.
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