通过化学腐蚀(AB腐蚀液)、金相显微镜观察、透射电镜(TEM)及能谱分析(EDX),对LEC法生产的半绝缘砷化镓( SI-GaAs)单晶中碳的微区分布进行了分析.其结果表明: 碳的微区分布与晶片中位错密度及分布存在对应关系.高密度位错区位错形成胞状结构,该结构的胞壁区碳含量高,近胞壁区次之,剥光区碳含量低于检测限.
参考文献
| [1] | Dobrilla P;Miller D C .Correlation of the etching morphology with the main midgap dornor distribution in undoped semi-insulating GaAs[J].Journal of the Electrochemical Society,1987,6 |
| [2] | 亚当斯.砷化镓的性质[M].北京:科学出版社,1990 |
| [3] | Hope D A O;Skolnicl M S;Cockayne B A .Comparison of the deep donor and strain distribution free semi-insulating undoped GaAs[J].Journal of Crystal Growth,1985,71:795. |
| [4] | Siegel W;Schulte S .Parameters of mesoscopic non-uniformities and their influence on the Hall mobility in undoped high-resistivity LEC GaAs[J].Semiconductor Science and Technology,1999,14:905. |
| [5] | Wakefield B;Davey S T .Characterisation of semi-insulation LEC GaAs by scanning electron microscopy[J].Microscopy of Semiconducting Materials,1985,373 |
| [6] | Brown G T;Warwick C A .On the interpretation of defect etching behavior of undoped, semi-insulation, liquid encapsulated Czochralski GaAs substrates[J].Journal of the Electrochemical Society,1986,133(12):2576. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%