利用新型全固源分子束外延技术,对1.55 μm波段应变补偿InAsP/InGaP多量子阱材料的生长进行了研究.在InAsP阱和InGaP垒之间插入InP中间层以减小阱和垒之间较大的剪切力.通过对生长材料的X射线衍射摇摆曲线和室温光致荧光光谱的比较,优化生长参数,获得了高质量的InAsP/InP/InGaP/InP应变补偿多量子阱结构,阱、垒、中间层的厚度分别为7.1,6.0,1.9 nm的7个周期的应变补偿多量子阱材料室温光荧光谱半高全宽为18.2 meV,是当前文献报道的1.55 μm 波段的InAsP多量子阱材料的最好结果之一.
参考文献
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