快速热退火对GaInNAs/GaAs单量子阱反常温度特性研究

1.中国科学院半导体研究所半导体超晶格微结构国家重点实验室,北京,100083

2.中国科学院半导体研究所半导体超晶格微结构国家重点实验室,北京,100083

3.中国科学院半导体研究所半导体超晶格微结构国家重点实验室,北京,100083

基金项目: 国家自然科学基金(60276003)

Effect of Rapid Thermal Annealing on Temperature-Induced Switching-over of Luminescence Transitions in GaInNAs/GaAs QWs

分析了MBE生长的GaInNAs/GaAs单量子阱样品的光致荧光谱(PL),细致地研究了在弱激发功率下GaInNAs/GaAs样品的发光峰位的S-型反常温度依赖关系.并对材料进行了退火处理,结果发现退火有效地改善材料的发光特性,并且会造成S-型的转变温度降低,从而说明退火可以有效地减少局域态.

[1]	Kondow M;Uomi K;Niwa A et al.GaInNAs: A novel material for Long-wavelength-range laser diodes with excellent high-temperature performance[J].Japanese Journal of Applied Physics,1996,35:1273.
[2]	KAWAGUCHI M;Miyamoto T et al.Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAsOGaAs quantum wells[J].Applied Physics Letters,2002,80:962.
[3]	Kaschner A;Lütteert T;Born H et al.Recombination mechanisms in GaInNAs/GaAs multiple quantum wells[J].Applied Physics Letters,2001,78:1391.
[4]	Liang X G;Jiang D S;Bian L F et al.Anomalous temperature dependence of photoluminescence in MBE-grown GaInNAs/GaAs QWs[J].Chinese Physics Letters,2002,19:1203.
[5]	Xin H P;Kavanagh K L;Zhu Z Q et al.Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells[J].Applied Physics Letters,1999,74:2337.
[6]	Soo YL.;Kao YH.;Chen JG.;Hulbert SL.;Geisz JF.;Kurtz S. Olson JM.;Kurtz SR.;Jones ED.;Allerman AA.;Huang S. .Local structures and interface morphology of InxGa1-xAs1-yNy thin films grown on GaAs[J].Physical Review.B.Condensed Matter,1999(19):13605-13611.

上一张下一张

计量

作者相关

文章评分