利用磁控溅射方法在(100)Si衬底上首先生长SrMnO3(SMO)作为缓冲层,再沉积得到了(110)择优取向生长的La0.8Sr0.2MnO3(LSMO)薄膜.利用X射线衍射仪分析了SMO缓冲层的结构特征对LSMO薄膜择优取向生长的影响.结果表明:当沉积温度为600℃时,增加缓冲层SMO的厚度,LSMO薄膜的取向性变好;当缓冲层SMO厚度为45 nm时,LSMO薄膜基本具有(110)取向生长的特征.进一步的工作证实:提高沉积温度,能够显著增加SMO缓冲层的晶粒大小,并减少LSMO薄膜择优取向生长所需的缓冲层厚度;当沉积温度为800℃时,由于类退火作用的存在,厚度为10 nm的SMO缓冲层就可以实现LSMO薄膜择优取向的生长.
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