用射频磁控溅射法在快速热处理过的Pt/Ti/SiO2/Si(100)基体上制备了Ba0.7Sr0.3TiO3薄膜.通过引入溅射因子α,在相同工艺条件(高温大功率溅射)下,对靶材成分进行调整,使薄膜成分无化学计量比偏离.薄膜成相较未调整前有显著改善,低角区的衍射杂峰消失.{100}方向有择优生长,同体材料及sol-gel法制备的BST薄膜有明显不同,研究认为是成分调整后,薄膜成分无偏离所致.
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