利用激光脉冲沉积(PLD)方法制备了沉积于硅基片上的掺杂过渡金属的非晶碳膜结构Fex-C1-x/Si.Fex-C1-x/Si的磁电阻(MR)可正可负,随温度而变化.当温度T＜258 K时,Fe0.011-C0.989/Si的MR为负值;当258 K＜T＜340 K时,该材料的MR为正值,在室温磁场为1 T时,该材料的正MR可以大于20%.且在不同的温度范围中,该材料的MR和外加磁场的依存关系呈现出不同的特点:在T=280和300 K时,当磁场小于1 T时,MR随磁场的增加而快速增加,之后随磁场的继续增加MR增加开始变得缓慢;在T=350 K时,MR近似以磁场的B1.5的规律变化;而在T=30 K时,MR为负值且其大小随磁场的增加而减小.利用双通道模型对该MR效应进行了初步解释.
参考文献
| [1] | Baibich M N;Broto J M;Fert A et al.Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices[J].Physical Review Letters,1988,61:2472. |
| [2] | Berkowitz A E;Mitchell J R;Carey M J et al.Giant magnetoresistance in heterogeneous Cu-Co alloys[J].Physical Review Letters,1992,68:3745. |
| [3] | Xiao J Q;Jiang J S;Chien C L .Giant magnetoresistance in nonmultilayer magnetic systems[J].Physical Review Letters,1992,68:3749. |
| [4] | Helmolt R V;Wecker J;Holzapfel B et al.Giant negative magnetoresistance in perovskitelike La2/3Ba1/3MnOx ferromagnetic films[J].Physical Review Letters,1993,71:2331. |
| [5] | Miyazaki T;Tezaka N .Giant magnetic tunneling effect in Fe/Al2O3/Fe junction[J].Journal of Magnetism and Magnetic Materials,1995,139:L231. |
| [6] | Xu R;Husmann A;Rosenbaum T F et al.Large magnetoresistance in non-magnetic silver chalcogenides[J].Nature,1997,390:57. |
| [7] | Yang F Y;Liu K;Hong K M et al.Large magnetoresistance of electrodeposited single-crystal bismuth thin films[J].Science,1999,284:1335. |
| [8] | Manyala N.;Sidis Y.;DiTusa JF.;Aeppli G.;Young DP.;Fisk Z. .Magnetoresistance from quantum interference effects in ferromagnets (vol404, pg 581, 2000)[J].Nature,2000(6812):616-NIL_18. |
| [9] | Xue QZ;Zhang X .Anomalous electrical transport properties of amorphous carbon films on Si substrates[J].Carbon: An International Journal Sponsored by the American Carbon Society,2005(4):760-764. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%