CuInSe2 (CIS)/Cu(In,Ga)Se2 (CIGS)半导体材料具有出色的光伏性能、丰富的缺陷物理内涵以及制备上的挑战,20多年来一直受到太阳能电池界和材料物理界的极大关注.介绍了CIS/CIGS基黄铜矿系光伏材料的微结构、缺陷物理模型.阐明了缺陷类型与材料电学性能的关系:Cu空位VCu是p型材料中的主要受主,Se空位VSe是n型材料中的主要施主;以及Na元素的作用:优化膜的形貌、提高膜的导电率、还能减小缺陷的浓度.综述了两种常用制备方法(蒸镀法、溅射法)的研究进展.
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