采用直拉法生长普通硅单晶和掺氮硅单晶, 研究两种晶体中空位型原生缺陷(voids)和氧化诱生层错(OSFs)的行为. 从两种晶体的相同位置取样, 并对样品进行Secco腐蚀、 1100℃湿氧氧化和铜缀饰实验. 实验结果表明, 在掺氮硅单晶中与较大尺寸的voids相关的流动图形缺陷(FPDs)的密度变小, 氧化诱生层错环(OSF-ring)向样片中心处移动, 同时宽度变大. 这说明在直拉硅中掺氮可以抑制大尺寸voids的产生, 同时可以缩小空位型缺陷区的范围, 而且V/I过渡区(OSF-ring)的范围变大.
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