Si1-yCy合金薄膜中替位式C组分随生长温度的变化

稀有金属, 2007, 31(z1): 5-8. doi: 10.3969/j.issn.0258-7076.2007.z1.002

Si1-yCy合金薄膜中替位式C组分随生长温度的变化

王荣华 ^1, , 韩平 ^2, , 王琦 ^3, , 夏冬梅 ^4, , 谢自力 ^5, , 张荣 ^6,

1.南京大学物理学系,江苏省光电信息功能材料重点实验室,江苏,南京,210093

2.南京大学物理学系,江苏省光电信息功能材料重点实验室,江苏,南京,210093

3.南京大学物理学系,江苏省光电信息功能材料重点实验室,江苏,南京,210093

4.南京大学物理学系,江苏省光电信息功能材料重点实验室,江苏,南京,210093

5.南京大学物理学系,江苏省光电信息功能材料重点实验室,江苏,南京,210093

6.南京大学物理学系,江苏省光电信息功能材料重点实验室,江苏,南京,210093

基金项目: 国家重点实验室基金(9140C1404010605) 国家高技术研究发展计划(863计划)(2006AA03A103) 国家重点基础研究发展计划(973计划)(2006CB604900) 教育部高等学校博士学科点专项科研基金(20050284004)

关键词：化学气相淀积 , Si1-yCy合金薄膜 , Si-C局域振动模

Variance of Substitutional C Fraction in Si1-yCy alloy Films with the Growth Temperature

用化学气相淀积方法,以乙烯为碳源、硅烷为硅源,在si(100)衬底上外延生长了替位式C组分达1.22%的Si1-yCy合金薄膜,研究表明:处于替位式格点位置的C原子与Si原子成键,形成Si-C局域振动模;随着生长温度的降低,更多具有较低迁移率的C原子占据替位式格点,导致合金薄膜中的替位式C组分增加、间隙式缺陷减少,薄膜的晶体质量得到有效提高;相应地薄膜承受的张应力增大,外延层中Si(TO)声子模发生蓝移.

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