用化学气相沉积方法对Si(111)衬底进行碳化处理,继而生长SjC外延层和应变Si薄膜.结果表明:随着碳化温度的降低,SiC薄层与Si衬底界面处的空洞有逐渐变小的趋势;在1100℃进行碳化处理可以有效减少界面处的空洞,得到较平整的sic薄层,在此条件下外延生长了高质量的SiC薄膜.在该SiC薄膜上外延获得了具有单一晶向的应变sj薄膜,其霍尔迁移率明显高于相同掺杂浓度的体Si材料,电学性能得到了有效改善.
参考文献
| [1] | Nobuyuki Sugii;Kiyokazu Nakagawa;Shinya Yamaguchi;Masanobu Miyao .Role of Si_(1-x)Ge_x buffer layer on mobility enhancement in a strained-Si n-channel metal-oxide-semiconductor field-effect transistor[J].Applied physics letters,1999(19):2948-2950. |
| [2] | Nayak D K;Woo S C S et al.High-mobility p-channel metal-oxide-semiconductor field-effeet transistor on strained Si[J].Applied Physics Letters,1993,62:2853. |
| [3] | Tezuka T;Sugiyama N;Takagi S .Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge frac-tion[J].Applied Physics Letters,2001,79:1798. |
| [4] | Nagasawa H.;Yagi K. .3C-SIC SINGLE-CRYSTAL FILMS GROWN ON 6-INCH SI SUBSTRATES[J].Physica status solidi, B. Basic research,1997(1):335-358. |
| [5] | Kamata I;Tsuehida H;Izumi K .The structure of 3C-SiC car-bonised layer on Si substrate[J].Microelectronic Engineering,1998,43-44:647. |
| [6] | Sun L et al.High hole mobility in p-strained Si grown on re-laxed SiC virtual substrate by low-pressure chemical vapor deposi-tion[J].Optical Materials,2003,23:109. |
| [7] | Norihiko Hayazawa;Masashi Motohashi et al.Highly sensitive strain detection in strained silicon by surface-enhoneed Raman spectroseopy[J].Applied Physics Letters,2005,86:263. |
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