用化学气相淀积方法在Si(100)衬底上制备Si缓冲层,继而外延生长Ge组分渐变的si1-xGex:C合金薄膜.研究表明,较低的Si缓冲层或Si1-xGex:C外延层生长温度均不利于获得理想的Si1-x,Gex:C合金薄膜,仅在Si缓冲层和sil一,Ge,:c外延层的生长温度均为750℃时可以获得质量较高、组分均匀的Si1-xGex:C合金薄膜.本文通过对材料结构及表面形貌的分析研究了缓冲层和外延层的生长温度对Si1-xGex:C合金薄膜性质的影响.
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