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采用螺旋波等离子体辅助射频溅射技术在Al203衬底的(0001)面上制备了ZnO薄膜.通过对其结构,光学及电学性质的分析,探讨了氧分压对薄膜生长及其特性的影响.结果表明,由于等离子体对反应气体的活化及载能粒子对表面反应的辅助作用,采用该等离子体辅助溅射技术能够在合适的氧分压下制得较高质量的ZnO薄膜.

参考文献

[1] 吴章汉,从善海,张文汉,吴润.光还原法制备Cu/ZnO纳米复合粉末[J].稀有金属,2005(03):271-274.
[2] Cox TI;Deshmukh V G I;Hope D A O et al.The use of Langmuir probes and optical emission spectroscopy to measure elec-tron energy distribution functions in RF-generated argon plasmas[J].Journal of Physics D:Applied Physics,1987,20:820.
[3] Yu Wei;Lu Wanbing;Han Li et al.Structural and optical properties of hydrogenated amorphous silicon carbide films by heli-con wave plasma-enhanced chemical vapour deposition[J].Journal of Physics D:Applied Physics,2004,37:3304.
[4] Lee Doo-Young;Choi Chul-Hwan;Kim Senn-Hyo .Growth and characterization of ZnO film on Si(111) substrate by helicon wave plasma-assisted evaporation[J].Journal of Crystal Growth,2004,268:184.
[5] Choopun S;Vispute R D;Noch W et al.Oxygen preasuro-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire[J].Applied Physics Letters,1999,75(25):3947.
[6] T. Nagata;A. Ashida;N. Fujimura;T. Ito .The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering[J].Journal of Applied Physics,2004(8):3923-3927.
[7] Fu Guangsheng;Xu Heju;Wang Sufang et al.Epitaxial growth of ZnO films by helicon-wave-plasma-assisted sputtering[J].Physica B,2006,382(1-2):17.
[8] He H P;Zhuge F;Ye Z Z et al.Strain and its effect on optical properties of Al-N cedoped ZnO films[J].Journal of Applied Physics,2006,99:023503.
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