采用超声电沉积-热处理两步法和超声共沉积一步法在钼基底上制备了致密的Cu-In合金薄膜.分别用SEM,EDS和XRD分析了Cu/In双层膜以及Cu-In合金膜的表面形貌、成分及相组成.结果表明:采用不同的电沉积工艺参数可以调节合金膜的Cu/In比率;超声电沉积可以得到晶粒细小、均匀致密的Cu,In以及Cu-In合金薄膜;两步法中超声电沉积得到的双层膜为CuIn和Cu或In相,经过热处理后转变为Cu11In9和Cu或In相;一步法超声共沉积得到的合金膜主要为CuIn相,根据Cu/In比率的不同,还会含有少量的Cu11In9或In相.
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