以高纯Hg,In,Te单质为原料,通过元素直接化合反应合成了碲铟汞(MIT)多晶料,并利用合成的高纯多晶料,在特殊设计的坩埚中,采用垂直Bridgman法通过自发成核方式成功地生长了尺寸为Φ 15 mm×175 mm的MIT单晶体.利用X射线粉末衍射技术对MIT晶体结构及物相进行了分析,结果表明,所获得的晶体是单相的MIT晶体,为缺陷闪锌矿结构,空间群为F43m.采用高分辨X射线衍射仪测量了所生长MIT晶体的摇摆曲线,结果表明,所得晶体完整性较好,为高质量的单晶体.对所生长的MIT晶体进行了热分析,发现在MIT晶体中有Hg溢出现象.
参考文献
[1] | 汤定元.我国红外技术发展的回顾[J].激光与红外,1998(05):260. |
[2] | 冯德伸,苏小平,闵振东,尹士平.Φ300 mm红外锗单晶生长及性能测试[J].稀有金属,2006(05):692-694. |
[3] | 黄杨程.空间遥感用InGaAs短波红外探测器[J].红外,2004(03):10-18,41. |
[4] | 王勤,刘激鸣,方家熊.空间用1.6μmHg1-xCdxTe室温光伏探测器[J].红外与毫米波学报,1998(02):81-86. |
[5] | 郑安生,邓志杰,俞斌才.化合物半导体材料的光电应用现状[J].稀有金属,2004(03):563-568. |
[6] | Wang Linghang;Jie Wanqi .Single-crystal growth of mercury indium telluride(MIT) by Vertical Bridgman method[J].Journal of Crystal Growth,2006,290:203. |
[7] | Grushka Z M;Gorley P N;Grushka O G;Horley P P,Radevych Y I,Zhuo Zhuang .Mercury indium telluride-a new promising material for photonic structures and devices[J].Proceedings of SPIE,2006,6029:60291A-602911. |
[8] | 王领航,董阳春,介万奇.碲铟汞晶体的生长及其电学特性[J].半导体学报,2007(07):1069-1071. |
[9] | Weitze D;Leute V .The phase diagrams of the quasibinary systems HgTe/In2Te3 and CdTe/In2Te3[J].Journal of Alloys and Compounds,1996,236:229. |
[10] | Leute V;Schmidtke H M .Thermodynamics and kinetics of the quasibinary system Hg(3-3x)In2xTe3-Ⅰ.Investigations by X-ray diffraction and differential thermoanalysis[J].Journal of Physics and Chemistry of Solids,1988,4:409. |
[11] | Grochowski E G;Mason D R;Schmitt G A;Smith P H .The phase diagram for the binary system indium-tellurium and electrical properties of In3Te5[J].Journal of Physics and Chemistry of Solids,1964,25:551. |
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