金属硅化物广泛用于微电子器件中的源、漏、栅极与金属电极间的接触,是制备纳米集成电路的关键材料之一.本文叙述了半导体集成电路用功能金属硅化物的相组成、界面反应和形成机制以及热蒸发、离子注入、溅射沉积、分子束外延等多种制备技术.比较了TiSi2,CoSi2,NiSi的材料性质及其对不同技术节点集成电路性能的影响.分析了退火温度与NiSi晶体结构和晶格常数间的关系.阐述了稀土金属硅化物的生长工艺和与硅衬底间势垒及界面特性.讨论了上述金属硅化物的性能评价与缺陷,热稳定性的检测方法.分析认为,探索32nm及以下技术节点极大规模半导体集成电路用新型金属硅化物已成为今后研究的主攻方向.
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