应用辊压快冷及可控结晶技术制备了玻璃陶瓷(SrNb2O6-NaNbO3-SiO2)纳米介电复合材料.研究了该复合材料的制备工艺参数与显微组织特性以及介电性能的关系,重点关注该材料的抗电击穿性能.X射线衍射(XRD)和扫描电镜(SEM)的分析结果显示,高温熔体经辊压快冷后得到典型的玻璃块体,在随后的可控结晶过程中,当温度高于750℃时,在玻璃基体中逐步析出具有高介电常数的纳米SrNb2O6和NaNbO3颗粒.当晶化温度为900℃时,析出相的平均尺寸约为28 nm.分析测试了该类材料介电常数的温谱特性和频谱特性.结果表明,该介电复合材料具有适宜的温谱和频谱特性.在100 Hz～1 MHz测试频率和-55～125℃测试范围内,该类材料均表现出极佳的稳定性(<5%).与此同时,基于其特有的低孔隙率和纳米晶粒度的特点,该类复合材料的抗电击穿能力亦很突出.在700℃结晶化处理的样品的电击穿强度高达120 kV·mm-1.
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