采用反应磁控溅射法结合加热控温电源,在光学玻璃基底上制备氮化铝(AlN)薄膜,通过X射线衍射(XRD)技术对薄膜样品物相结构进行分析,利用纳米压痕仪测试薄膜样品的硬度及弹性模量,用椭圆偏振仪及光栅光谱仪测试了薄膜样品的光学性能,分析和研究了基底温度对AlN薄膜的结构及性能的影响.结果表明,用此方法获得的AlN薄膜呈晶态,属于六方晶系,温度对AlN(100)面衍射峰强度影响不大,但对(110)面衍射峰的影响较大,因而温度对AlN的择优取向有一定影响.AlN(100)峰半高宽随温度升高而减小,表明晶粒尺寸随温度升高有变大趋势.随沉积温度升高,薄膜硬度从150℃的8 GPa增加到350℃的10 GPa左右,随基底温度升高,薄膜的硬度增加.弹性模量随温度的变化趋势与硬度的基本一致.在可见光区域AlN薄膜透过率超过90％,基本属于透明膜.基底温度对薄膜折射率也有较明显影响,折射率大致随温度升高而增大,但由椭偏测试及透射谱线分析得到的厚度结果表明,随温度升高,AlN薄膜的沉积速率下降.
参考文献
| [1] | Yang Ketao;Chen Guanghui .The research progress of AlN thin films[J].shandong ceramics,2005,28(01):17. |
| [2] | Kuo P K;Auner G W;Wu Z L .Microstructure and thermal conductivity of epitaxial AlN thin films[J].THIN SOLID FILMS,1994,253:223. |
| [3] | D. Liufu;K. C. Kao .Piezoelectric, dielectric, and interfacial properties of aluminum nitride films[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1998(4):2360-2366. |
| [4] | Miao XS;Chan YC;Pun EYB .A new protective AlN film for organic photoconductors[J].Applied physics letters,1997(2):184-186. |
| [5] | 于红,杨志民.导电颗粒Mo对AlN/Mo复合陶瓷性能的影响[J].稀有金属,2010(03):378-382. |
| [6] | Ji Hong;Yang Baohe;Li Cuiping .Preparation of KlN films on Si(111) and Si(100) substrates by magnetron reactive sputtering[J].Journal of Optoelectronics·Laser,2010,21(10):1524. |
| [7] | Venkataraj S;Severin D;Drese R;Koerfer F;Wuttig M .Structural, optical and mechanical properties of aluminium nitride films prepared by reactive DC magnetron sputtering[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2006(1/2):235-239. |
| [8] | Oliveira IC;Grigorov KG;Maciel HS;Massi M;Otani C .High textured AlN thin films grown by RF magnetron sputtering; composition, structure, morphology and hardness[J].Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology,2004(4):331-338. |
| [9] | Cheng Hsyien;Lin Tienchai;Chen Wenchien .Preparation of[0 0 2]oriented AlN thin films by mid-frequency reactive sputtering technique[J].THIN SOLID FILMS,2003,425(1-2):85. |
| [10] | 谢尚晻,何欢,符跃春.脉冲激光沉积AlN薄膜的结构表征和性能研究进展[J].材料导报,2010(11):45-49. |
| [11] | 门传玲,林成鲁.脉冲激光沉积氮化铝薄膜的电学性能研究[J].功能材料与器件学报,2006(04):264-268. |
| [12] | Ristoscu C;Ducu C;Socol G;Craciunoiu F Mihailescu I N .Structural and optical characterization of KlN films grown by pulsed laser deposition[J].Applied Surface Science,2005,248(1-4):411. |
| [13] | Huang A P;Wang W G;Xu S L;Zhu M K Li G H Wang B Yan H .Oriented KlN films prepared with solid AlCl3 source by bias assisted Cat-CVD[J].Materials Science and Engineering B:Solid-state materials for advanced technology,2004,107(02):161. |
| [14] | 许小红,武海顺,张富强,金志浩.氮化铝薄膜结构和表面粗糙度的研究[J].稀有金属材料与工程,2000(06):394-397. |
| [15] | 汪振中,褚夫同,刘兴钊.中频磁控反应溅射制备c轴择优取向AlN薄膜[J].功能材料,2010(z3):449-451. |
| [16] | Akiyama Morito;Xu Chao-Nan;Kazuhiro Nonaka;Kazuhisa Shobu Tadahiko Watanabe .Statistical approach for optimizing sputtering conditions of highly oriented aluminum nitride thin films[J].THIN SOLID FILMS,1998,315(1-2):62. |
| [17] | Sheng Shixiong.X-ray Diffraction Technic:Polycrystalline Amorphous Material[M].Beijing:Metallurgic Industrial Press,1986 |
| [18] | 马科斯?玻恩;埃米尔?沃尔夫;杨葭荪.光学原理[M].北京:电子工业出版社,2005:54. |
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