利用高性能阴极荧光(CL)联合分析系统结合场发射扫描电镜对使用MOCVD方法在蓝宝石衬底上实现的不同生长温度条件下InGaN/GaN薄膜材料进行测试分析.利用CL紫外可见光谱系统,对(0001)面蓝宝石衬底上生长的InGaN/GaN薄膜进行阴极荧光单色谱测试分析,揭示了CL的发光波长与In成分变化之间的关系,即随着薄膜中Im含量的降低CL谱峰值波长随之产生蓝移.为了进一步研究InGaN薄膜材料的发光机制及薄膜中出现的V坑,对InGaN/GaN薄膜材料进行了同一位置的SEM图像和CL Mapping的对比分析,探讨了缺陷与发光的关系.认定了薄膜中出现的大尺寸V坑对InGaN薄膜材料的发光没有帮助；小尺寸V坑被认定为热腐蚀坑,也对薄膜发光没有贡献.结合SEM图像和CL Mapping初步确认了部分In富集区域.同时研究了InGaN/GaN薄膜表面形貌的平坦区域与沟壑区域造成的发光波动.
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