使用电子束蒸发镀膜方法在覆有掩膜板的SiO2/Si基片上制备了Ni80 Fe20/Al2 O3/Ag/Al2 O3/Ni80 Fe20结构平面自旋阀,研究了不同退火温度对Ni80 Fe20/Al2O3/Ag/Al2 O3/Ni80Fe20平面自旋阀中自旋积累的影响.使用非局域测量方法分别测量制备态以及300,400和500℃不同退火温度下Ni80 Fe20/Al2O3/Ag/Al2O3/Ni80Fe20平面自旋阀中Ag层中自旋积累信号的大小.实验结果表明:自旋积累信号在制备态下为1.3 mΩ；随着退火温度的升高,自旋积累信号也随着增大,并在500℃退火30 min后达到极大值(～14.5 mΩ),比制备态提高了一个数量级；进一步提高退火温度到600℃时,由于Ag层会凝聚成岛状结构而破坏Ni80 Fe20/Al2 O3/Ag/Al2 O3/Ni80 Fe20平面自旋阀中Ag层的连续性,使Ag层断裂,从而使测量到的自旋积累信号为0 mΩ.研究认为,Ni80 Fe20/Al2 O3/Ag/Al2O3/Ni80 Fe20平面自旋阀中自旋积累信号的增强主要是高的界面自旋极化率以及长的自旋扩散长度共同作用的结果.Ni80 Fe2/Al2O3/Ag/Al2 O3/Ni80 Fe20平面自旋阀中的铁磁/非磁金属界面处Al2O3插层的平整度在退火后得到改善,有效地提高了界面自旋极化率；同时,样品表面的Al2 O3保护层退火后对Ag层中自旋电子的散射作用的增强,提高了Ag中自旋电子的扩散长度.
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