采用磁控溅射技术在p-Si(100)衬底上生长了Gd2O3掺杂HfO2( GDH)高κ薄膜,制备了GDH/Si和GDH/Al2O3/Si两种堆栈层.结果表明Al2O3界面钝化使漏电流密度降低了两个数量级,并改善了回滞窗口和平带电压的偏移.高温N2退火对堆栈层电学性能影响明显:随着温度的增加,界面性能逐步改善,退火温度为900℃时,回滞窗口小于20 mV,积累区趋势平缓并且单位面积电容值增大,薄膜介电常数为20.
参考文献
[1] | 屠海令,杜军.高介电常数栅介质的性能及与硅衬底间的界面稳定性[J].稀有金属,2007(03):265-278. |
[2] | 许高博,徐秋霞.先进的Hf基高k栅介质研究进展[J].电子器件,2007(04):1194-1199. |
[3] | 冯丽萍,刘正堂,田浩.新型高k栅介质HfSiON薄膜的制备及性能研究[J].稀有金属材料与工程,2008(11):2008-2011. |
[4] | Scott E. Thompson;Robert S. Chau;Tahir Ghani;Kaizad Mistry;Sunk Tyagi;Mark T. Bohr .In Search of "Forever", Continued Transistor Scaling One New Material at a Time[J].IEEE Transactions on Semiconductor Manufacturing: A Publication of the IEEE Components, Hybrids, and Manufacturing Technology Society, the IEEE Electron Devices Society, the IEEE Reliability Society, the IEEE Solid-State Circuits Council,2005(1):26-36. |
[5] | Wei F;Tu H L;Wang Y;Yue S J Du J .Epitaxial La2 Hf2O7 thin films on Si(001) substrates grown by pulsed laser deposition for high-κ gate dielectrics[J].Applied Physics Letters,2008,92(01):26. |
[6] | Visokay M R;Chambers J;J Rotondaro A L P;Shanware A,Colombo L.Application of HfSiON as a gate dielectric material[J].Applied Physics Letters,2002(80):010278. |
[7] | 武德起,赵红生,姚金城,张东炎,常爱民.高介电栅介质材料研究进展[J].无机材料学报,2008(05):865-871. |
[8] | Yuhua Xiong;Hailing Tu;Jun Du;Mei Ji;Xinqiang Zhang;Lei Wang .Band structure and electrical properties of Gd-doped HfO_(2) high k gate dielectric[J].Applied physics letters,2010(1):012901-1-012901-3. |
[9] | Umezawa N;Shiraishi K;Ohmori K.Suppression of oxygen vacancy formation in Hf-based high-κ dielectrics by lanthanum incorporation[J].Applied Physics Letters,2007(91):132904. |
[10] | Xiong Y H;Tu H L;Du J.Effects of rapid thermal annealing on structure and electrical properties of Gd-doped HfO2 high κ film[J].Applied Physics Letters,2011(98):082906. |
[11] | 张雪锋,季红兵,邱云贞,王志亮,徐静平.HfO2/TaON叠层栅介质Ge MOS器件制备及电性能研究[J].半导体技术,2010(12):1149-1152. |
[12] | Cheng X H;He D W;Song Z R .Interfaciai and electrical characterization of HfO2 gate dielectric film with a blocking layer of Al2O3[J].Rare Metal Materials and Engineering,2009,38(02):189. |
[13] | 张雪锋,季红兵,邱云贞,王志亮,黄静,张振娟,徐静平.超薄HfN界面层对HfO2栅介质Ge pMOSFET电性能的改进[J].固体电子学研究与进展,2010(04):507-509,517. |
[14] | 陈勇,杨志民,张心强.Si(100)衬底上CeO2薄膜的脉冲激光制备及性能研究[J].稀有金属,2011(05):709-714. |
[15] | Wen L;Tao Y;Yue K;Jiang L.Breakdown phenomena of zirconium-doped hafnium oxide high-κ stack with an inserted interface layer[J].Applied Physics Letters,2006(89):072901. |
[16] | 邹晓,蒋万翔,徐静平.表面预处理对Ge MOS电容特性的影响[J].半导体技术,2009(06):573-575,606. |
[17] | Xinqiang Zhang .Cube-on-cube epitaxy of Gd_2O_3-doped HfO_2 films on Si(100) substrates by pulse laser deposition[J].Journal of Crystal Growth,2009(1):41. |
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