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随着器件特征尺寸不断缩小,集成度不断提高,传统的基于电荷存储的非易失性FLASH存储器将面临物理与技术的极限.新型的阻变存储器具有高速读写、存储密度高、能耗低等优点引起了微电子产业界广泛关注.介绍了阻变存储器的阻变行为,综述了目前研究的存储机制、性能及其改善方法、材料体系、器件结构,并展望了阻变存储器的应用前景.

参考文献

[1] Scott J F;de Argujo C A P .Ferroelectric memories[J].Science,1989,246(4936):1400.
[2] Bez R.Chalcogenide PCM:a memory technology for next decade[A].,2009:89.
[3] Simpson, RE;Krbal, M;Fons, P;Kolobov, AV;Tominaga, J;Uruga, T;Tanida, H .Toward the Ultimate Limit of Phase Change in Ge2Sb2Te5[J].Nano letters,2010(2):414-419.
[4] Kao B K F;Lee C M;Chen M J;Teai M J,Chin T S .Ga2Te3Sb5-A candidate for fast and ultralong retention phase-change memory[J].Advanced Materials,2009,21(17):1695.
[5] Zhu JG.;Prinz GA.;Zheng YF. .Ultrahigh density vertical magnetoresistive random access memory (invited)[J].Journal of Applied Physics,2000(9 Pt.3):6668-6673.
[6] Tehrani S.;Slaughter JM.;Chen E.;DeHerrera M.;Durlam M. Naji P.;Whig R.;Janesky J.;Calder J.;Engel B. .Recent developments in Magnetic Tunnel Junction MRAM[J].IEEE Transactions on Magnetics,2000(5 Pt.1):2752-2757.
[7] G. I. Meijer .Who Wins the Nonvolatile Memory Race?[J].Science,2008(5870):1625-1626.
[8] Burr G W;Kurdi B N;Scott J C;Lam C H Gopalakrishnan K Shenoy R S .Overview of candidate device technologies for storage-class memory[J].IBM Journal of Research and Development,2008,52(45):449.
[9] Waser R;Dittmann R;Staikov G;Szot K .Redox-based resistive switching memories-nanoionic mechanisms,prospects,and challenges[J].Advanced Materials,2009,21(25-26):2632.
[10] Goux, L.;Lisoni, J. G.;Wang, X. P.;Jurczak, M.;Wouters, D. J. .Optimized Ni Oxidation in 80-nm Contact Holes for Integration of Forming-Free and Low-Power Ni/NiO/Ni Memory Cells[J].IEEE Transactions on Electron Devices,2009(10):2363-2368.
[11] Hickmott T W .Low-frequency negative resistance in thin anodic oxide films[J].Journal of Applied Physics,1962,33(09):2669.
[12] Deamaley G;Stoneham A M;Morgan D V .Electrical phenomena in amorphous oxide films[J].Reports on Progress in Physics,1970,33(11):1129.
[13] Pagnia H;Sotnik N .Bistableswit ching in electroformed metal-imulator-metal devices[J].Physical Status Solidi A,1988,108(01):11.
[14] Asamitsu A;Tomioka Y;Kumahara H;Tokura Y .Current switching of resistive states in magnetoresistive manganites[J].Nature,1997,388(6637):50.
[15] A. Beck;J. G. Bednorz;Ch. Gerber .Reproducible switching effect in thin oxide films for memory applications[J].Applied physics letters,2000(1):139-141.
[16] Perez T;De Rose Cesar A F .Non-volatile memory:emerging technologies and their impacts on memory systems[R].Porto Alegre:Pontiffcia Universidade Católica do Rio Grande do Sul,2010.
[17] Lu W;Lieber C M .Nanoelectronics from the bottom up[J].Nature Materials,2007,6:841.
[18] Pershin, Y.V.;Di Ventra, M. .Memory effects in complex materials and nanoscale systems[J].Advances in physics,2011(2):145-227.
[19] Akihito Sawa .Resistive switching in transition metal oxides[J].Materials Today,2008(6):28-36.
[20] Kim, K.M.;Jeong, D.S.;Hwang, C.S. .Nanofilamentary resistive switching in binary oxide system; A review on the present status and outlook[J].Nanotechnology,2011(25):254002-1-254002-17.
[21] Sim H;Choi H;Lee D;Chang M,Choi D,Son Y,Lee E H,Kim W,Park Y,Yoo I K,Hwang H.Excellent resistance switching characteristics of Pt/SrTiO3 schottky junction for multibit nonvolatile memory application[A].,2006:777.
[22] S. Tsui;A. Baikalov;J. Cmaidalka;Y. Y. Sun;Y. Q. Wang;Y. Y. Xue;C. W. Chu;L. Chen;A. J. Jacobson .Field-induced resistive switching in metal-oxide interfaces[J].Applied physics letters,2004(2):317-319.
[23] Asanuma S;Akoh H .Relationship between resistive switching characteristics and band diagrams of Ti/Pr1-xCax MnO3 junctions[J].Physical Review B,2009,80(23):235113.
[24] Kim K M;Choi B J;Hwang C S .Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films[J].Applied Physics Letters,2007,90(24):242906.
[25] Ruth Muenstermann;Regina Dittmann;Krzysztof Szot;Shaobo Mi;Chun-Lin Jia;Paul Meuffels;Rainer Waser .Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO_(3)[J].Applied physics letters,2008(2):023110-1-023110-3-0.
[26] J. S. Choi;J.-S. Kim;I. R. Hwang;S. H. Hong;S. H. Jeon;S.-O. Kang;B. H. Park;D. C. Kim;M. J. Lee;S. Seo .Different resistance switching behaviors of NiO thin films deposited on Pt and SrRuO_(3) electrodes[J].Applied Physics Letters,2009(2):022109-1--022109-3-0.
[27] Lin C Y;Wu C Y;Lee T C Yang F L Hu C Tseng T Y .Effect of top electrode material on resistive switching properties of ZrO2 film memory devices[J].IEEE Electron Device Letters,2007,28(05):366.
[28] Kwon, DH;Kim, KM;Jang, JH;Jeon, JM;Lee, MH;Kim, GH;Li, XS;Park, GS;Lee, B;Han, S;Kim, M;Hwang, CS .Atomic structure of conducting nanofilaments in TiO2 resistive switching memory[J].Nature nanotechnology,2010(2):148-153.
[29] Yang, YC;Pan, F;Liu, Q;Liu, M;Zeng, F .Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application[J].Nano letters,2009(4):1636-1643.
[30] Hangbing Lv;Ming Wang;Haijun Wan;Yali Song;Wenjing Luo;Peng Zhou;Tingao Tang;Yinyin Lin;R. Huang;S. Song .Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode[J].Applied Physics Letters,2009(21):213502-1-213502-3-0.
[31] P. Zhou;M. Yin;H. J. Wan;H. B. Lu;T. A. Tang;Y. Y. Lin .Role of TaON interface for Cu_(x)O resistive switching memory based on a combined model[J].Applied physics letters,2009(5):053510-1-053510-3-0.
[32] Jung R;Lee MJ;Seo S;Kim DC;Park GS;Kim K;Ahn S;Park Y;Yoo IK;Kim JS .Decrease in switching voltage fluctuation of Pt/NiOx/Pt structure by process control[J].Applied physics letters,2007(2):22112-1-22112-3-0.
[33] Seo S;Lee M J;Seo D H;Jeoung E J Suh D S Joung Y S Yoo I K Hwang I R Kim S H Byun I S Kim J S Choi J S Park B H .Reproducible resistance switching in polycrystalline NiO films[J].Applied Physics Letters,2004,85(23):5655.
[34] Jung K;Choi J;Kim Y;Im H;Seo S;Jung R;Kim D;Kim JS;Park BH;Hong JP .Resistance switching characteristics in Li-doped NiO[J].Journal of Applied Physics,2008(3):34504-1-34504-4-0.
[35] Wen-Yuan Chang;Kai-Jung Cheng;Jui-Ming Tsai;Hung-Jen Chen;Frederick Chen;Ming-Jinn Tsai;Tai-Bor Wu .Improvement of resistive switching characteristics in TiO_(2) thin films with embedded Pt nanocrystals[J].Applied physics letters,2009(4):042104-1-042104-3.
[36] Lee H Y;Chen P S;Wu T I Y;Chen Y S Wang F C C C Tzeng P J Lin C H Tsai M J Lien C .HfOx bipolar resistive memory with robust endurance using AlCu as buffer electrode[J].IEEE Electron Device Letters,2009,30(07):703.
[37] S. Q. Liu;N. J. Wu;A. Ignatiev .Electric-pulse-induced reversible resistance change effect in magnetoresistive films[J].Applied physics letters,2000(19):2749-2751.
[38] Wong H S Philip;Kim S B;Lee B;Caldwell M A,Liang J,Wu Y,Jeyasingh R G D,Yu S.Recent progress of phase change memory(PCM) and resistive switching random access memory (RRAM)[A].Shanghai,China:IEEE PRESS,2010:1055.
[39] Kozicki M N;Balakrishnan M;Gopalan C;Ratnakumar C,Mitk-ova M.Programmable metallization cell memory based on Ag-Ge-S and Cu-Ge-S solid electrolytes[A].,2005:83.
[40] Symanczyk, R.;Bruchhaus, R.;Dittrich, R.;Kund, M. .Investigation of the Reliability Behavior of Conductive-Bridging Memory Cells[J].IEEE Electron Device Letters,2009(8):876-878.
[41] Wang Z.;Griffin P. B.;McVittie J.;Wong S.;McIntyre P. C.;Nishi Y. .Resistive Switching Mechanism in <formula formulatype="inline"><tex>$hbox{Zn}_{x}hbox{Cd}_{1 - x}hbox{S}$</tex></formula> Nonvolatile Memory Devices[J].IEEE Electron Device Letters,2007(1):14-16.
[42] Zhai MH;Yin KB;Shi L;Yin J;Liu ZG .Conductance switching effect in the Cu/CuI0.76S0.14/Pt structure[J].Journal of Physics, D. Applied Physics: A Europhysics Journal,2007(12):3702-3706.
[43] Hsu D;Lin J G;Wu W F;Wu C T,Chen C H .Voltage-current hysteretic characteristics in ME/Nd0.7 Ca0 3 MnO3 thin films with ME =Au,Pt,Ag,Cu[J].IEEE Transactions on Magnetics,2007,43(06):3067.
[44] A. Beck;J. G. Bednorz;Ch. Gerber .Reproducible switching effect in thin oxide films for memory applications[J].Applied physics letters,2000(1):139-141.
[45] Schindler C;Thermadam S C P;Waser R;Kozicki M N .Bipolar and unipolar resistive switching in Cu-doped SiO2[J].IEEE Transactions on Electron Devices,2007,54(10):2762.
[46] Li, Y.;Long, S.;Zhang, M.;Liu, Q.;Shao, L.;Zhang, S.;Wang, Y.;Zuo, Q.;Liu, S.;Liu, M. .Resistive Switching Properties of $hbox{Au}/ hbox{ZrO}_{2}/hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications[J].IEEE Electron Device Letters,2010(2):117-119.
[47] Guan W.;Long S.;Liu Q.;Liu M.;Wang W. .Nonpolar Nonvolatile Resistive Switching in Cu Doped ZrO<sub>2</sub>[J].IEEE Electron Device Letters,2008(5):434-437.
[48] YoonJ;Choi H;Lee D;Park J B Lee J Seong D J Ju Y Chang M Jung S Hwang H .Excellent switching uniformity of Cu-doped MoOx/GdOx bilayer for nonvolatile memory application[J].IEEE Electron Device Letters,2009,30(05):457.
[49] Shunichi Kaeriyama;Toshitsugu Sakamoto;Hiroshi Sunamura;Masayuki Mizuno;Hisao Kawaura;Tsuyoshi Hasegawa;Kazuya Terabe;Tomonobu Nakayama;Masakazu Aono .A Nonvolatile Programmable Solid-Electrolyte Nanometer Switch[J].IEEE Journal of Solid-State Circuits,2005(1):168-176.
[50] Chang WY;Lai YC;Wu TB;Wang SF;Chen F;Tsai MJ .Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications[J].Applied physics letters,2008(2):22110-1-22110-3-0.
[51] Jo SH;Lu W .CMOS compatible nanoscale nonvolatile resistance, switching memory[J].Nano letters,2008(2):392-397.
[52] Jo SH;Kim KH;Lu W .High-Density Crossbar Arrays Based on a Si Memristive System[J].Nano letters,2009(2):870-874.
[53] Ji Hyun Hur;Myoung-Jae Lee;Chang Bum Lee;Young-Bae Kim;Chang-Jung Kim .Modeling for bipolar resistive memory switching in transition-metal oxides[J].Physical review, B. Condensed matter and materials physics,2010(15):155321:1-155321:5.
[54] Kim W T;Jung J H;Kim T W;Son D I .Current bistahility and carrier transport mechanisms of organic bistable devices based on hybrid Ag nanoparticle-polymethyl methacrylate polymer nano-composites[J].Applied Physics Letters,2010,96(25):253301.
[55] Gregor L V .Polymer dielectric films[J].IBM Journal of Research and Development,1968,12(02):140.
[56] Gregor L V .Electrical conductivity of polydivinylbenzene films[J].Thin Solid Films,1968,2(03):235.
[57] Lai YS;Tu CH;Kwong DL;Chen JS .Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications[J].Applied physics letters,2005(12):2101-1-2101-3-0.
[58] Tondelier D;Lmimouni K;Vuillaume D;Fery C;Haas G .Metal/organic/metal bistable memory devices[J].Applied physics letters,2004(23):5763-5765.
[59] Mahapatro AK;Agrawal R;Ghosh S .Electric-field-induced conductance transition in 8-hydroxyquinoline aluminum (Alq3)[J].Journal of Applied Physics,2004(6):3583-3585.
[60] Ouyang J;Chu C W;Szmanda C R;Ma L P,Yang Y .Prrogrammable polymer thin film and non-volatile memory device[J].Nature Materials,2004,3:918.
[61] Ling QD;Lim SL;Song Y;Zhu CX;Chan DSH;Kang ET;Neoh KG .Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C-60[J].Langmuir: The ACS Journal of Surfaces and Colloids,2007(26):312-319.
[62] M. A. Reed;J. Chen;A. M. Rawlett;D. W. Price;J. M. Tour .Molecular random access memory cell[J].Applied physics letters,2001(23):3735-3737.
[63] Akkerman HB;Blom PWM;de Leeuw DM;de Boer B .Towards molecular electronics with large-area molecular junctions[J].Nature,2006(7089):69-72.
[64] D. R. Stewart;D. A. A. Ohlberg;P. A. Beck;Y. Chen;R. Stanley Williams;J. O. Jeppesen;K. A. Nielsen;J. Fraser Stoddart .Molecule-Independent Electrical Switching in Pt/Organic Monolayer/Ti Devices[J].Nano letters,2004(1):133-136.
[65] Scott JC;Bozano LD .Nonvolatile memory elements based on organic materials[J].Advanced Materials,2007(11):1452-1463.
[66] M(o)ller S;Perlov C;Jackson W;Taussig C Forrest S R .A polymer/semiconductor write-once read-many-times memory[J].Nature,2003,426:166.
[67] Cho B;Kim T W;Song S;Ji Y Jo M Hwang H Jung G Y Lee T .Rewritable switching of one diode-one resistor nonvolatile organic memory devices[J].Advanced Materials,2009,21(11):1.
[68] Chen A;Haddad S;Wu Y C;Fang T N,Lan Z,Avanzino S,Pangrle S,Buynoski M,Rathor M,Cai W,Tripsas N,Bill C,VanBuskirk M,Taguchi M.Non-volatile resistive switching for advanced memory applications[A].Wash-ington,America,2005:746.
[69] Baek I G;Lee M S;Seo S;Lee M J,Seo D H,Suh D S,Park J C,Park S O,Kim H S,Yoo I K,Chung U In,Moon J T.Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses[A].,2004:587.
[70] Lee D;Seong D J;Choi H J;JoI,Dong R,Xiang W,Seokjoon O,Myeongbum P,Seo Sok,Heo S,Minseok J,Hwang D K,Park H K,Chang M,Hasan M,Hwang H.Excellent uniformity and reproducible resistance switching characteristics of doped binary metal oxides for non-volatile resistance memory applications[A].San Francisco,America,2006:1.
[71] Tsunoda K;Kinoshita K;Noshiro H;Yamazaki Y,Iizuka T,Ito Y,Akahashi A,Okano A,Sato Y,Fukano T,Aoki M,Sugiyama Y.Low power and high speed switching of Ti-doped NiO ReRAM under the unipolar voltage source of less than 3 V[A].Washington,America,2007:767.
[72] Lee H Y;Chen P S;Wu T Y;Chen Y S,Wang C C,Tzeng P J,Lin C H,Chen F,-Lien C H,Tsai M J.Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 base RRAM[A].San Francisco,America,2008
[73] Lee B;Woug H S P.NiO resistance change memory with a novel structure for 3D integration and improved confinement of conduction path[A].Honolulu,America,2009:28.
[74] Chen Y C;Chien W C;Lin Y Y;Lee F M,Hsoeh K Y,Lu C Y.Cu-based and WO,resistive switching memories (ReRAM)for embedded and stand-alone applications[A].Shanghai,China:IEEE PRESS,2010:1065.
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