利用TaCl2-H2-HCl反应体系,采用冷壁式化学气相沉积法(CVD)在钼基体表面沉积钽涂层.通过X射线衍射仪、金像显微镜及扫描电镜等手段,对不同沉积温度下钽涂层的组成、组织及形貌进行了研究.结果表明:在1000～1300℃范围内,钽沉积层的相组成无变化,而对择优生长有一定影响；钽沉积层晶粒尺寸随沉积温度的升高而增大；钽沉积层表面颗粒呈金字塔形多面体且随沉积温度的升高而增大.
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