介绍了化学气相沉积(CVD)技术制备难熔金属钽涂层的原理及方法.利用TaCl5-H2-HCl反应体系,以冷壁式化学气相沉积法在钼基体表面沉积了钽涂层.利用扫描电子显微镜(SEM)、X射线物相分析仪(XRD)、显微硬度计等分析手段,研究了反应气体(氢气、氯气)的流量变化对钽涂层的沉积速率、结构、表面形貌、硬度及密度等的影响;应用Harris公式,计算了钽涂层的织构系数,获得了钽涂层的择优取向.研究结果表明:随着氢气流量的增加,涂层沉积速率加快,随着氯气流量的增加,涂层的沉积速率则是先增加后减小;涂层由体心立方结构的钽(α-Ta)构成,表面形貌呈类金字塔形结构,涂层(200)晶面方向为最快生长方向;反应气体流量变化对涂层硬度及密度的影响均不明显;涂层维氏硬度在HV 130.94 ～HV 152.43之间,涂层致密性好,相对密度都在99.65％以上.
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