在MgO衬底上,利用共蒸发方法制备DyBa2Cu3O7作为缓冲层,再利用磁控溅射和后处理方法,制备了Tl2Ba2CaCu2O8超导薄膜.X射线衍射θ～2θ及φ扫描结果表明Tl-2212薄膜、Dy-123薄膜与衬底MgO呈外延生长关系.制备的Tl-2212薄膜Tc＝105.5K,液氮温度下临界电流密度Jc＝2.5×106A/cm2.
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