{"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"采用化学溶液法在Pt/<span style=\"color:red\">Ti</span>/SiO2/Si衬底上制备了<span style=\"color:red\">PbZr0.4Ti0.6O3</span>/LaNiO<span style=\"color:red\">3</span>(PZT/LNO)多层薄膜.X射线衍射测量表明LNO缓冲层的引入使PZT薄膜(111)择优取向度减小,(100)取向增加.原子力显微镜测量表明引入LNO缓冲层使得PZT薄膜表面更加平整、致密.在LNO缓冲层上制备的PZT薄膜具有优良的铁电特性和介电特性:LNO缓冲层厚度为40nm时,500 kV/cm的外加电场下,剩余极化(Pr)为37.6μC/cm2,矫顽电场(Ec)为65 kV/cm;100 kHz时,介电常数达到822,并且发现LNO缓冲层的厚度为40nm,PZT的铁电、介电特性改进最为显著.","authors":[{"authorName":"王根水","id":"3661286c-0635-40fa-9260-03d1b28e6aef","originalAuthorName":"王根水"},{"authorName":"石富文","id":"4125a4a0-8b3a-4192-8235-deb5bdecfb1a","originalAuthorName":"石富文"},{"authorName":"孙璟兰","id":"3c879f45-bf99-4cfc-81cf-a5229e7e9eaa","originalAuthorName":"孙璟兰"},{"authorName":"孟祥建","id":"011be182-eeb2-4cba-85e3-a0bdbe322f1e","originalAuthorName":"孟祥建"},{"authorName":"戴宁","id":"81e147f7-72b7-420e-a1ea-15a28162910e","originalAuthorName":"戴宁"},{"authorName":"褚君浩","id":"fbb2f591-c319-46d8-bd69-51c8feb79fe7","originalAuthorName":"褚君浩"}],"doi":"10.3969/j.issn.1007-4252.2004.03.004","fpage":"294","id":"79fc7176-5c7b-4cc9-8152-589c9c20f38b","issue":"3","journal":{"abbrevTitle":"GNCLYQJXB","coverImgSrc":"journal/img/cover/GNCLYQJXB.jpg","id":"34","issnPpub":"1007-4252","publisherId":"GNCLYQJXB","title":"功能材料与器件学报   "},"keywords":[{"id":"8a6d22eb-0b05-4da1-a0cb-6d9d6d2b067d","keyword":"LaNiO<span style=\"color:red\">3</span>","originalKeyword":"LaNiO3"},{"id":"2137bd01-ecbf-4c81-a475-0de27ba18ab4","keyword":"<span style=\"color:red\">PbZr0.4Ti0.6O3</span>","originalKeyword":"PbZr0.4Ti0.6O3"},{"id":"cd9b9b45-1e21-4fdd-a54f-3ae5e919a554","keyword":"铁电薄膜","originalKeyword":"铁电薄膜"},{"id":"cf1d1b20-c6c5-47f2-ba83-bbcfe28ca2d9","keyword":"剩余极化","originalKeyword":"剩余极化"},{"id":"802dab54-28bb-41f1-a768-35572ad650b0","keyword":"介电特性","originalKeyword":"介电特性"}],"language":"zh","publisherId":"gnclyqjxb200403004","title":"LaNiO<span style=\"color:red\">3</span>缓冲层对Pb(Zr,<span style=\"color:red\">Ti</span>)<span style=\"color:red\">O3</span>铁电薄膜的影响","volume":"10","year":"2004"},{"abstractinfo":"从Landau-Devonshire唯象理论出发,通过热力学分析得到了<span style=\"color:red\">PbZr0.4Ti0.6O3</span>体材料和薄膜的电热效应与温度和电场的关系.结果表明,在居里温度附近,体材料发生铁电相变,而在足够强的电场下,其固有的电热效应破坏了铁电相变的不连续性,绝热温度改变了约11K,对薄膜结构的<span style=\"color:red\">PbZr0.4Ti0.6O3</span>,绝热温度改变了约7.3K,这与实验结果(12K)基本相符.薄膜结构使铁电材料由不连续相变转到连续相变,它还减小了铁电材料的电热效应,降低了各物理量随温度变化的灵敏性.","authors":[{"authorName":"王英龙","id":"c96a1de2-a95e-40aa-8645-21b3876eebe9","originalAuthorName":"王英龙"},{"authorName":"魏同茹","id":"fbe63b08-f30a-4b4c-9e37-6c0e24e96030","originalAuthorName":"魏同茹"},{"authorName":"刘保亭","id":"6d532351-73d0-4ac0-8c8d-2905b54fbb40","originalAuthorName":"刘保亭"},{"authorName":"褚立志","id":"6e3f06c6-7c28-499d-9b3e-ba3c21f1f3d2","originalAuthorName":"褚立志"},{"authorName":"傅广生","id":"3d6ae87b-3c37-4a95-a128-b9159683ad5a","originalAuthorName":"傅广生"}],"doi":"","fpage":"1115","id":"98b2a284-76bc-41d4-a035-ce9ba4e9a2dc","issue":"7","journal":{"abbrevTitle":"GNCL","coverImgSrc":"journal/img/cover/GNCL.jpg","id":"33","issnPpub":"1001-9731","publisherId":"GNCL","title":"功能材料"},"keywords":[{"id":"b4d0068f-8bd4-4aca-b0a8-93f70f2a6652","keyword":"铁电薄膜","originalKeyword":"铁电薄膜"},{"id":"721f06aa-b1eb-4747-a738-cedb6c1fa96f","keyword":"电热效应","originalKeyword":"电热效应"},{"id":"a3e00a99-63cd-405c-8e6b-982d528aa50e","keyword":"铁电相变","originalKeyword":"铁电相变"}],"language":"zh","publisherId":"gncl200807017","title":"强电场下<span style=\"color:red\">PbZr0.4Ti0.6O3</span>薄膜的电热效应","volume":"39","year":"2008"},{"abstractinfo":"The microstructure of ferroelectric [<span style=\"color:red\">PbZr</span>(x)<span style=\"color:red\">Ti</span>(1-x)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>)/<span style=\"color:red\">PbZr</span>(y)<span style=\"color:red\">Ti</span>(1-y)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>)](n) epitaxial multilayers (x/y 0.2/<span style=\"color:red\">0.4</span>, <span style=\"color:red\">0.4</span>/<span style=\"color:red\">0.6</span>) deposited on SrRuO(<span style=\"color:red\">3</span>)-coated SrTiO(<span style=\"color:red\">3</span>) substrates by pulsed-laser deposition with different layer periodicity and layer thickness was characterized by means of transmission electron microscopy. Electron diffraction and contrast analysis revealed a very clear and well-separated layer sequence. The microstructures of <span style=\"color:red\">PbZr</span>(0.2)<span style=\"color:red\">Ti</span>(0.8)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>)/<span style=\"color:red\">PbZr</span>(<span style=\"color:red\">0.4</span>)<span style=\"color:red\">Ti</span>(<span style=\"color:red\">0.6</span>)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>) and <span style=\"color:red\">PbZr</span>(<span style=\"color:red\">0.4</span>)<span style=\"color:red\">Ti</span>(<span style=\"color:red\">0.6</span>)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>)/<span style=\"color:red\">PbZr</span>(<span style=\"color:red\">0.6</span>)<span style=\"color:red\">Ti</span>(<span style=\"color:red\">0.4</span>)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>) multilayers show a similar tendency in the dependence on the individual layer thickness. Whereas with thick individual layers, tetragonal a-domains are confined to specific layers of the two types of multilayers, below a certain critical thickness of the individual layers, a-domains extend over the whole film. This indicates a transition into a uniform tetragonal lattice and strain state of the whole multilayer. Increasing the layer periodicity further, the interfaces in <span style=\"color:red\">PbZr</span>(<span style=\"color:red\">0.4</span>)<span style=\"color:red\">Ti</span>(<span style=\"color:red\">0.6</span>)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>)/<span style=\"color:red\">PbZr</span>(<span style=\"color:red\">0.6</span>)<span style=\"color:red\">Ti</span>(<span style=\"color:red\">0.4</span>)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>) multilayers become rough, and complex a-domain configurations appear.","authors":[],"categoryName":"|","doi":"","fpage":"1359","id":"94640b37-5916-4192-bfbe-203edab56294","issue":"10","journal":{"abbrevTitle":"PM","id":"45954468-0270-4f3b-a90f-47f86b6217ff","issnPpub":"1478-6435","publisherId":"PM","title":"Philosophical Magazine"},"keywords":[{"id":"27608527-f1fa-4fb9-a9e2-7525a4e49e5b","keyword":"ferroelectrics;transmission electron microscopy;microstructure;ferroelectric thin-films;misfit relaxation mechanisms;domain;configurations;heterostructures;polarization","originalKeyword":"ferroelectrics;transmission electron microscopy;microstructure;ferroelectric thin-films;misfit relaxation mechanisms;domain;configurations;heterostructures;polarization"}],"language":"en","publisherId":"1478-6435_2010_10_1","title":"Microstructural evolution of <span style=\"color:red\">PbZr</span>(x)<span style=\"color:red\">Ti</span>(1-x)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>)/<span style=\"color:red\">PbZr</span>(y)<span style=\"color:red\">Ti</span>(1-y)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>) (n) epitaxial multilayers (x/y=0.2/<span style=\"color:red\">0.4</span>, <span style=\"color:red\">0.4</span>/<span style=\"color:red\">0.6</span>) - dependence on layer thickness","volume":"90","year":"2010"},{"abstractinfo":"Multilayers consisting of two tetragonal compositions <span style=\"color:red\">PbZr</span>(0.2)<span style=\"color:red\">Ti</span>(0.8)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>) and <span style=\"color:red\">PbZr</span>(<span style=\"color:red\">0.4</span>)<span style=\"color:red\">Ti</span>(<span style=\"color:red\">0.6</span>)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>) were deposited onto a SrRuO(<span style=\"color:red\">3</span>) electrode grown on a vicinal (100) SrTiO(<span style=\"color:red\">3</span>) substrate. It has been shown by extensive structural investigations comprising transmission electron microscopy in conventional and high resolution mode, reciprocal space mapping and piezoresponse force microscopy that with decreasing layer thickness a transition from a-domains confined to individual layers to a-domains propagating through the whole film takes place. This is caused by the formation of a common strain state of all layers which is responsible for the observed enhancement of the electrical properties. These show a maximum in the product of remanent polarization and dielectric constant at a certain density of interfaces. If the interface density becomes too high the lattice distortion accompanying each interface deteriorates the properties of the multilayer structure.","authors":[],"categoryName":"|","doi":"","fpage":"","id":"24fa9973-e89d-44e4-8910-76318d68a1cf","issue":"8","journal":{"abbrevTitle":"JOPDP","id":"8a34b94c-f12f-48b4-9244-e8a08cb36e20","issnPpub":"0022-3727","publisherId":"JOPDP","title":"Journal of Physics D-Applied Physics"},"keywords":[{"id":"12e1233b-2926-4a8a-ad20-3ccf2d4efb44","keyword":"thin-films;dislocations;layer","originalKeyword":"thin-films;dislocations;layer"}],"language":"en","publisherId":"0022-3727_2009_8_1","title":"Impact of high interface density on ferroelectric and structural properties of <span style=\"color:red\">PbZr</span>(0.2)<span style=\"color:red\">Ti</span>(0.8)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>)/<span style=\"color:red\">PbZr</span>(<span style=\"color:red\">0.4</span>)<span style=\"color:red\">Ti</span>(<span style=\"color:red\">0.6</span>)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>) epitaxial multilayers","volume":"42","year":"2009"},{"abstractinfo":"我们通过脉冲激光淀积的方法在Y-ZrO2衬底上原位生长了Pb(Zr<span style=\"color:red\">0.6</span>T i<span style=\"color:red\">0.4</span>)<span style=\"color:red\">O3</span>/YBa2Cu<span style=\"color:red\">3O</span>7-x双层薄膜,在此样品上利用电子探针分析了成分,X衍射谱证实了两层薄膜为单取向生长.对Pb(Zr<span style=\"color:red\">0.6Ti</span>0. 4)<span style=\"color:red\">O3</span>薄膜的铁电性质进行了测试,得到了典型的电滞回线,并对介电常数和损耗角正切值随频率变化进行了测量.INVESTIGATION ON THE GROWTH AND ELECTRICAL PROPERTIES OF Pb(Zr<span style=\"color:red\">0.6Ti0.4</span>)<span style=\"color:red\">O3</span>/YBa2Cu<span style=\"color:red\">3O</span>7-x BILAYER STRUCTURE","authors":[{"authorName":"顾大振","id":"39506b70-ab37-474c-90c3-3daeba9dd69d","originalAuthorName":"顾大振"},{"authorName":"傅泽禄","id":"ef368a61-535c-4ccd-9954-5d2029aa66f5","originalAuthorName":"傅泽禄"},{"authorName":"刘雷","id":"82088d03-40ef-4c51-adb3-e3e909f210f3","originalAuthorName":"刘雷"},{"authorName":"刘庆国","id":"f1dc068c-1691-4923-946b-c093b425afa1","originalAuthorName":"刘庆国"},{"authorName":"冯一军","id":"98b9861b-4a20-4a89-959f-dd6adaa18bcc","originalAuthorName":"冯一军"},{"authorName":"康琳","id":"4668603a-1ebf-4602-a706-df525512d524","originalAuthorName":"康琳"},{"authorName":"吉争鸣","id":"d123443f-8bfc-401a-bda6-aa18a52d2a2c","originalAuthorName":"吉争鸣"},{"authorName":"杨森祖","id":"d8a39359-bc69-4b60-810d-95d8d0b665c1","originalAuthorName":"杨森祖"},{"authorName":"张志刚","id":"83e94381-916a-495f-bfd7-a21421b9e42a","originalAuthorName":"张志刚"},{"authorName":"王业宁","id":"e40a9152-f769-493a-87dc-3c801b20602d","originalAuthorName":"王业宁"}],"doi":"10.3969/j.issn.1000-3258.2000.06.005","fpage":"428","id":"cb7d3cec-2568-4efb-92ba-4b0f9fa53e70","issue":"6","journal":{"abbrevTitle":"DWWLXB","coverImgSrc":"journal/img/cover/DWWLXB.jpg","id":"19","issnPpub":"1000-3258","publisherId":"DWWLXB","title":"低温物理学报   "},"keywords":[{"id":"af6d57bb-f266-4806-8361-feef9bc79e1d","keyword":"","originalKeyword":""}],"language":"zh","publisherId":"dwwlxb200006005","title":"Pb(Zr<span style=\"color:red\">0.6Ti0.4</span>)<span style=\"color:red\">O3</span>/YBa2Cu<span style=\"color:red\">3O</span>7-x双层结构的制备及其特性的研究","volume":"22","year":"2000"},{"abstractinfo":"采用金属有机分解法(MOD)在LNO(100)/Si衬底上制备了Pb<SUB>0.985</SUB>La<SUB>0.01</SUB>(Zr<SUB><span style=\"color:red\">0.4</span></SUB><span style=\"color:red\">Ti</span><SUB><span style=\"color:red\">0.6</span></SUB>)<span style=\"color:red\">O</span><SUB><span style=\"color:red\">3</span></SUB>(PLZT)铁电薄膜. 在薄膜的快速退火过程中, 增加了一个中间温度预退火过程, 并研究了该过 <BR>程对薄膜晶型结构和铁电性能的影响. 结果发现, 中间温度预退火过程可以影响薄膜对晶型结构的选择. 没有中间温度预退火过程的薄膜, 显示出(100)择优取向; 而经中间温度预退火的 <BR>薄膜则表现为随机取向. 对薄膜铁电性能的研究表明, 没有中间温度预退火过程的薄膜的铁电性能较差, 经380℃预退火的薄膜显示出最佳的铁电性能. 晶型结构取向和缺陷是影 <BR>响PLZT薄膜铁电性能的两个主要因素.","authors":[{"authorName":"马建华","id":"c53b25bd-a181-4668-ba73-a91d2764fcf3","originalAuthorName":"马建华"},{"authorName":"孟祥建","id":"b3d07502-ec30-4299-babe-5c310c8f5f2a","originalAuthorName":"孟祥建"},{"authorName":"孙兰璟","id":"8d0cb4b7-e3a5-422e-9440-67832e5727f7","originalAuthorName":"孙兰璟"},{"authorName":"褚君浩","id":"94c4bc7c-e0c2-44bf-b3f6-67d45a1f5fd5","originalAuthorName":"褚君浩"}],"categoryName":"|","doi":"","fpage":"163","id":"522a0ab4-6512-4f3f-a653-9f28ff132b3b","issue":"1","journal":{"abbrevTitle":"WJCLXB","coverImgSrc":"journal/img/cover/WJCLXB.jpg","id":"62","issnPpub":"1000-324X","publisherId":"WJCLXB","title":"无机材料学报"},"keywords":[{"id":"7212667a-4bb3-4106-a673-ab9603015d93","keyword":"PLZT薄膜","originalKeyword":"PLZT薄膜"},{"id":"5470dfc5-5113-452b-b731-1aa5afccaed2","keyword":" intermediate pre-annealing process","originalKeyword":" intermediate pre-annealing process"},{"id":"b3b2f303-5563-4956-a0d1-6ab67e5ca421","keyword":" crystallinity","originalKeyword":" crystallinity"},{"id":"bf4ea71d-f806-4b11-8ba5-b003f92b96c0","keyword":" ferroelectricity","originalKeyword":" ferroelectricity"}],"language":"zh","publisherId":"1000-324X_2005_1_2","title":"MOD法制备的Pb<SUB>0.985</SUB>La0.01(Zr<SUB><span style=\"color:red\">0.4</span></SUB><span style=\"color:red\">Ti</span><SUB><span style=\"color:red\">0.6</span></SUB>)<span style=\"color:red\">O</span><SUB><span style=\"color:red\">3</span></SUB>","volume":"20","year":"2005"},{"abstractinfo":"传统的方法很难直接在硅衬底上制备外延的氧化物铁电电容器,本实验采用生长在硅衬底上的外延SrTiO<span style=\"color:red\">3</span>为模板,直接生长了SrRuO<span style=\"color:red\">3</span>/<span style=\"color:red\">PbZr0.5Ti0.5O3</span>/SrRuO<span style=\"color:red\">3</span>电容器异质结,并对其结构及性能进行了研究.X射线衍射表明所制备的SrRuO<span style=\"color:red\">3</span>/<span style=\"color:red\">PbZr0.5Ti0.5O3</span>/SrRuO<span style=\"color:red\">3</span>异质结实现了在硅衬底上的外延生长.在5V测试电压下,铁电电容器的剩余极化强度和矫顽电压分别为19.6μC/cm2和0.8V.当极化翻转次数达到1010时,铁电电容器的极化强度没有明显的衰减,表明SrRuO<span style=\"color:red\">3</span>/<span style=\"color:red\">PbZr0.5Ti0.5O3</span>/SrRuO<span style=\"color:red\">3</span>电容器具有良好的抗疲劳性能.","authors":[{"authorName":"朱慧娟","id":"a2502ed1-6dc9-4a81-8163-529f91fa86d6","originalAuthorName":"朱慧娟"},{"authorName":"刘保亭","id":"5cceb833-ef52-44e1-a948-3437a5995ebb","originalAuthorName":"刘保亭"},{"authorName":"代秀红","id":"469b0197-97c2-4061-9e48-c3dc04954753","originalAuthorName":"代秀红"},{"authorName":"郭建新","id":"445b472c-c8f9-4901-afcd-805b4e938234","originalAuthorName":"郭建新"},{"authorName":"周阳","id":"088a9a93-6578-4151-8ef9-3c88ead9fd1c","originalAuthorName":"周阳"}],"doi":"","fpage":"428","id":"a2afb500-e564-48be-b5ac-8c7fcda421a3","issue":"3","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"8b764e10-2f9a-4ea3-a605-f47754316000","keyword":"硅衬底","originalKeyword":"硅衬底"},{"id":"6fde684f-8490-4841-afef-8afde39ae75d","keyword":"外延生长","originalKeyword":"外延生长"},{"id":"92c10a68-126f-4a8b-9e82-7e6f6b494c36","keyword":"SrRuO<span style=\"color:red\">3</span>/<span style=\"color:red\">PbZr0.5Ti0.5O3</span>/SrRuO<span style=\"color:red\">3</span>异质结","originalKeyword":"SrRuO3/PbZr0.5Ti0.5O3/SrRuO3异质结"}],"language":"zh","publisherId":"rgjtxb98201303010","title":"硅基外延SrRuO<span style=\"color:red\">3</span>/<span style=\"color:red\">PbZr0.5Ti0.5O3</span>/SrRuO<span style=\"color:red\">3</span>电容器的结构和性能研究","volume":"42","year":"2013"},{"abstractinfo":"制备了组分为xCuFe2<span style=\"color:red\">O</span>4-(1-x)<span style=\"color:red\">PbZr0.53Ti0.47O3</span>(其中x=0.1,0.2,0.3,1.0)的磁电复合材料.XRD实验表明,样品中只存在着CuFe2<span style=\"color:red\">O</span>4和<span style=\"color:red\">PbZr0.53Ti0.47O3</span>相.利用多功能摆测量了样品在低频下(0.1-6.4 Hz)的内耗,同时利用HP 4194A阻抗分析仪测量了样品低频(100 Hz-1 MHz)的介电损耗,分析了复合物中CuFe2<span style=\"color:red\">O</span>4和PZT对内耗及介电损耗分别所作的贡献.","authors":[{"authorName":"戴玉蓉","id":"c354352b-11f5-4365-b7e4-43c9f129a790","originalAuthorName":"戴玉蓉"},{"authorName":"包鹏","id":"fa86eece-65dc-4379-9234-ae5b3addd4cb","originalAuthorName":"包鹏"},{"authorName":"朱劲松","id":"6dbdab9b-2ef1-45b9-a980-10bd15db367f","originalAuthorName":"朱劲松"},{"authorName":"沈惠敏","id":"ee935340-61f9-48e3-a0bb-9e17301cd175","originalAuthorName":"沈惠敏"},{"authorName":"刘俊明","id":"8cffc454-97ac-49a0-a08f-82eebe3f2007","originalAuthorName":"刘俊明"},{"authorName":"王业宁","id":"877d3850-ec36-47c7-906d-a5a6ee1dad8a","originalAuthorName":"王业宁"}],"doi":"10.3321/j.issn:0412-1961.2003.11.023","fpage":"1209","id":"5d6b88c9-ed2c-42fc-9134-b8c3db566db0","issue":"11","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"a1204fbf-e2ae-4e5c-9921-397736d38f9d","keyword":"内耗","originalKeyword":"内耗"},{"id":"a0cbb78f-4ba9-47e6-9533-23c01122d613","keyword":"磁电效应","originalKeyword":"磁电效应"},{"id":"98bda3de-a5b4-4416-bd5d-a1dec69f220f","keyword":"介电损耗","originalKeyword":"介电损耗"}],"language":"zh","publisherId":"jsxb200311023","title":"磁电复合材料CuFe2<span style=\"color:red\">O</span>4/<span style=\"color:red\">PbZr0.53Ti0.47O3</span>的内耗与介电损耗","volume":"39","year":"2003"},{"abstractinfo":"The influence of magnetic fields on the mechanical loss (Q(-1)) of Terfenol-D/<span style=\"color:red\">PbZr</span>(0.52)<span style=\"color:red\">Ti</span>(0.48)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>)/Terfenol-D three-layer laminated composites is investigated systemically using the technique for measuring the resonance magnetoelectric (ME) effect. The results indicate that Q(-1) varies non-monotonically with dc magnetic fields and shows a maximum near 500 Oe for all the samples with different layer thickness ratios (n) of Terfenol-D (Tb(0.3)Dy(0.7)Fe(1.92)). Considering various kinds of mechanical energy dissipation, it is found that Q(-1) is mainly dominated by the mechanical damping due to the domain wall motion in Terfenol-D under the actions of dc and ac magnetic fields as well as the stress at the interface. In addition, the effect of eddy current losses on the energy dissipation of the system is also discussed. (C) 2011 Elsevier B.V. All rights reserved.","authors":[],"categoryName":"|","doi":"","fpage":"6920","id":"88732377-4439-4271-9cce-fd034bd7d4be","issue":"24","journal":{"abbrevTitle":"JOAAC","id":"de8b3eb8-d3c1-4889-812c-8ad260eabadc","issnPpub":"0925-8388","publisherId":"JOAAC","title":"Journal of Alloys and Compounds"},"keywords":[{"id":"841a0f17-5303-4ae2-97c0-29ef226d2343","keyword":"Magnetoelectric composite;Mechanical energy dissipation;Domain wall;motion;magnetomechanical damping capacity;terfenol-d;magnetostriction;alloys;tb0.27dy0.73fe2;tb0.3dy0.7fe1.95","originalKeyword":"Magnetoelectric composite;Mechanical energy dissipation;Domain wall;motion;magnetomechanical damping capacity;terfenol-d;magnetostriction;alloys;tb0.27dy0.73fe2;tb0.3dy0.7fe1.95"}],"language":"en","publisherId":"0925-8388_2011_24_1","title":"Influence of magnetic fields on the mechanical loss of Terfenol-D/<span style=\"color:red\">PbZr</span>(0.52)<span style=\"color:red\">Ti</span>(0.48)<span style=\"color:red\">O</span>(<span style=\"color:red\">3</span>)/Terfenol-D laminated composites","volume":"509","year":"2011"},{"abstractinfo":"制备了组分为xCuFe2<span style=\"color:red\">O</span>4-(1-x)<span style=\"color:red\">PbZr0.53Ti0.47O3</span>(其中x=0．1，0．2，0．3，1．0)的磁电复合材料，XRD实验表明，样品中只存在着CuFe2<span style=\"color:red\">O</span>4和<span style=\"color:red\">PbZr0.53Ti</span>0.4703相．利用多功能摆测量了样品在低频下(0.1--6．4Hz)的内耗，同时利用HP4194A阻抗分析仪测量了样品低频(100Hz--1 MHz)的介电损耗，分析了复合物中CuFe2<span style=\"color:red\">o</span>4和PZT对内耗及介电损耗分别所作的贡献．","authors":[{"authorName":"戴玉蓉","id":"8d6af0a2-03ab-4945-8009-9e2628777258","originalAuthorName":"戴玉蓉"},{"authorName":"包鹏","id":"b00fd98e-557b-4c96-a54f-36ae4c2e2ef9","originalAuthorName":"包鹏"},{"authorName":"朱劲松","id":"7e70260d-27ab-41bb-80c5-2bcde746ced9","originalAuthorName":"朱劲松"},{"authorName":"沈惠敏","id":"7983e083-df42-466d-806a-7f31e1f3ae10","originalAuthorName":"沈惠敏"},{"authorName":"刘俊明","id":"6b0eaf82-b359-4bc2-aae6-45b7d61c96c2","originalAuthorName":"刘俊明"},{"authorName":"王业宁","id":"725d9c86-bff8-4d1d-88ad-d232b11a8e46","originalAuthorName":"王业宁"}],"categoryName":"|","doi":"","fpage":"1209","id":"0d859b4b-4169-4c43-b620-486d94efb3a9","issue":"11","journal":{"abbrevTitle":"JSXB","coverImgSrc":"journal/img/cover/JSXB.jpg","id":"48","issnPpub":"0412-1961","publisherId":"JSXB","title":"金属学报"},"keywords":[{"id":"4c06d5f5-7848-4b58-b5b7-9f27b38c86fe","keyword":"内耗","originalKeyword":"内耗"},{"id":"8c55c0d5-cd22-4403-8cfc-04736078c2b0","keyword":"null","originalKeyword":"null"},{"id":"4b0738f9-7832-466f-ad30-cf435657856b","keyword":"null","originalKeyword":"null"}],"language":"zh","publisherId":"0412-1961_2003_11_16","title":"磁电复合材料CuFe2<span style=\"color:red\">O</span>4／<span style=\"color:red\">PbZr0.53Ti0.47O3</span>的内耗与介电损耗","volume":"39","year":"2003"}],"totalpage":7825,"totalrecord":78249}