本文采用溅射沉积方法在双轴织构的Ni-W5%基带上制备了CeO2和Y2O3薄膜.研究表明CeO2薄膜在Ni基带上的外延方式受生长速率、生长温度的控制.在快速沉积情况下,CeO2薄膜为(111)取向,在沉积速率较低时,以(00l)取向为主.CeO2薄膜沉积过程中,可以有效避免Ni的氧化.在Y2O3的沉积过程中,Ni基带的氧化不可避免,但其氧化物也有良好的取向.
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